IS42S16800E-6TL-TR

The IS42S16800E-6TL-TR is a 128 Mbit synchronous DRAM organized as 8M × 16 with a parallel memory interface in a 54‑pin TSOP II package. It implements a fully synchronous, quad‑bank architecture with registered signals referenced to the rising edge of the clock.

Designed for systems requiring burst-capable, clocked DRAM, this device supports up to 166 MHz operation (–6 speed grade) with programmable burst lengths and CAS latency options, delivering flexible performance for legacy parallel SDRAM designs and board‑level working memory.

Key Features

• Memory Core  The device provides 128 Mbit capacity organized as 8M × 16 with four internal banks for bank‑interleaving and row‑access hiding.
• Synchronous Performance  Fully synchronous operation with all signals referenced to the positive clock edge; –6 speed grade supports 166 MHz clock frequency and 5.4 ns access time (CAS latency = 3).
• Flexible Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency options (2 or 3 clocks) to match system timing.
• Refresh and Power Modes  Supports Auto Refresh and Self Refresh with 4096 refresh cycles every 64 ms and includes a power‑down mode for lower standby consumption.
• Interface  LVTTL compatible input/output interface with random column address capability every clock cycle for continuous column access.
• Supply and Timing  Operates from a 3.0 V to 3.6 V supply range (typical 3.3 V VDD/VDDQ) with deterministic timing parameters provided in the device datasheet.
• Package and Temperature  Available in a 54‑pin TSOP II package (0.400", 10.16 mm width) and specified for 0°C to 70°C ambient operating temperature (TA).

Typical Applications

• Legacy SDRAM‑based systems  Drop‑in synchronous DRAM for designs that use a parallel SDRAM interface and require 128 Mbit memory capacity.
• Board‑level working memory  Use as temporary working storage or buffering where burst reads/writes and programmable CAS latency are required.
• Prototyping and evaluation  54‑TSOP II package option simplifies board evaluation and development for designs targeting this package style.

Unique Advantages

• Deterministic synchronous timing: Supports fully synchronous, clocked operation with specified access times (5.4 ns for CL=3) for predictable system timing.
• Configurable performance: Programmable burst length, burst sequence, and CAS latency allow tuning for different memory access patterns and system requirements.
• Robust refresh support: Auto Refresh and Self Refresh modes with 4096 refresh cycles every 64 ms maintain data integrity while enabling power savings.
• Standard package compatibility: 54‑pin TSOP II footprint provides a compact, industry‑recognizable form factor for existing board designs.
• Flexible supply range: Operates across a 3.0 V to 3.6 V supply range (typical 3.3 V), supporting common 3.3 V system rails.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The IS42S16800E-6TL-TR balances synchronous DRAM performance and practical package options for designs that require a 128 Mbit parallel SDRAM solution. Its programmable burst behavior, CAS latency options, and internal quad‑bank organization provide predictable, configurable memory performance for systems using a parallel interface.

This device is appropriate for engineers and procurement teams targeting stable 3.3 V SDRAM integration in a 54‑pin TSOP II package, offering documented timing, refresh control, and power modes that support reliable operation across typical commercial temperature ranges.

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