IS42S16800E-75EBL

The IS42S16800E-75EBL is a 128 Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution Inc (ISSI), organized as 8M × 16 with a parallel memory interface. It implements a fully synchronous, pipeline architecture with a quad-bank organization and LVTTL signaling for high-speed, clocked memory operations.

This device targets systems requiring compact, parallel SDRAM in a 54-ball TF‑BGA (8×8) package and supports features such as programmable burst length and sequence, auto- and self-refresh, and operation at 3.0–3.6 V with an ambient temperature range of 0°C to 70°C.

Key Features

• Core Architecture  Fully synchronous pipeline SDRAM with internal quad-bank organization (4 banks) and all inputs/outputs referenced to the rising edge of CLK.
• Memory Organization  128 Mbit total capacity configured as 8M × 16, delivering 33,554,432-bit banks suitable for parallel memory systems.
• Performance  Supported clock frequencies include up to 133 MHz for the -75E grade; access time from clock can be 5.4 ns (CAS latency = 2 for the -75E grade).
• Programmable Burst & Timing  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence options (sequential or interleave); selectable CAS latency (2 or 3 clocks) where applicable.
• Refresh & Power Modes  Auto Refresh and Self Refresh supported with 4096 refresh cycles every 64 ms; includes power-down capability.
• Interface & Signaling  Parallel memory interface with LVTTL-compatible signals for command and control.
• Power Supply  VDD and VDDQ nominal 3.3 V operation; device supply range listed as 3.0 V to 3.6 V.
• Package  54-ball TF‑BGA (8×8) compact package (54-TFBGA) for space-constrained board designs.
• Operating Conditions  Specified ambient operating temperature range of 0°C to 70°C (TA).

Typical Applications

• Parallel SDRAM memory expansion  Integration into systems that require a 128 Mbit parallel SDRAM device with LVTTL signaling and compact BGA packaging.
• High-speed buffering and burst access  Use where programmable burst lengths, burst sequencing and fast clock-referenced access are needed for burst read/write operations.
• Systems requiring refresh management  Designs that rely on automatic and self-refresh modes (4096 refresh cycles per 64 ms) to maintain data integrity.

Unique Advantages

• Clocked, synchronous pipeline architecture: All signals referenced to the rising clock edge provide deterministic timing for tight memory control.
• Flexible burst control: Programmable burst lengths and sequence modes enable matching memory transfers to system access patterns.
• Compact BGA footprint: 54-TFBGA (8×8) package offers a small board area for space-constrained designs while maintaining parallel interface connectivity.
• Robust refresh capabilities: Auto Refresh and Self Refresh support with specified refresh cycle requirements simplifies system refresh handling.
• Wide supply tolerance: Operation across 3.0 V to 3.6 V supplies enables compatibility with typical 3.3 V memory power rails.

Why Choose IS42S16800E-75EBL?

The IS42S16800E-75EBL delivers a compact, synchronous 128 Mbit DRAM solution built around a pipeline, quad-bank architecture that supports programmable burst operation and clock-referenced timing. Its 54-ball TF‑BGA package and LVTTL interface make it suitable for designs that require a parallel SDRAM with controlled timing and refresh capabilities.

This device is appropriate for designs that need deterministic, clocked memory behavior with flexible burst options and integrated refresh modes, offering predictable access timing (e.g., 5.4 ns access from clock for the -75E grade) and standard 3.3 V class supply operation.

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