IS42S16800E-75EBLI

The IS42S16800E-75EBLI is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a quad-bank, pipeline architecture. It provides high-speed, fully synchronous parallel memory for systems that require deterministic clocked data transfers and low-latency access.

Designed for board-level integration, the device supports industry-standard SDRAM features such as programmable burst modes, auto and self refresh, and an LVTTL interface, and is specified for operation from -40°C to 85°C on a 3.0 V–3.6 V supply.

Key Features

• Memory Organization  The device is a 128 Mbit SDRAM configured as 8M × 16 with four internal banks for concurrent row access and precharge hiding.
• Synchronous Pipeline Architecture  Fully synchronous operation with all signals referenced to the rising edge of CLK for deterministic timing.
• Clock & Timing  Supports clock frequencies up to 200, 166, 143 and 133 MHz (product -75E rated at 133 MHz), with programmable CAS latency (2, 3) and access times down to 5.4 ns.
• Burst Control & Access  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (Sequential/Interleave). Supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh & Power Modes  Auto Refresh (CBR) and Self Refresh supported; 4096 refresh cycles every 64 ms to maintain data integrity.
• Interface  LVTTL-compatible parallel interface for standard SDRAM connectivity and random column addressing every clock cycle.
• Supply & Package  Operates from 3.0 V to 3.6 V (nominal 3.3 V) and is supplied in a compact 54-ball TF‑BGA (8 × 8) package.
• Temperature Range  Specified for industrial temperature operation from -40°C to 85°C (TA).

Typical Applications

• Embedded memory subsystems  Provides synchronous parallel DRAM capacity for designs requiring 128 Mbit SDRAM with programmable burst operation.
• Board-level memory expansion  Compact 54-ball TF‑BGA package suits systems that need a small-footprint SDRAM device with standard 3.3 V supply.
• Industrial equipment  Specified operation from -40°C to 85°C supports use in systems requiring industrial temperature coverage.

Unique Advantages

• Versatile clock support: Multiple supported clock frequencies (200, 166, 143, 133 MHz) enable selection of timing points that match system requirements.
• Low-latency access: CAS latency options (2, 3) and access times to 5.4 ns reduce read latency for time-sensitive memory operations.
• Flexible burst control: Programmable burst lengths and sequences provide efficient block transfers and adaptable memory throughput.
• Robust refresh management: Auto and self refresh modes with 4096 refresh cycles per 64 ms minimize data loss during power management and idle periods.
• Compact BGA package: 54‑ball TF‑BGA (8 × 8) package enables dense board placement while providing a standard ballout for assembly.
• Industrial temperature rating: -40°C to 85°C specified range supports a wide set of operating environments.

Why Choose IS42S16800E-75EBLI?

The IS42S16800E-75EBLI delivers a balanced combination of synchronous, pipeline SDRAM performance and system-friendly features—programmable burst modes, selectable CAS latency, and robust refresh options—making it suitable for designs that demand predictable, clocked memory behavior. Its 8M × 16 organization and quad-bank architecture provide the internal structure for concurrent operations and efficient data throughput.

With a 3.0 V–3.6 V supply range, LVTTL interface, and a compact 54-ball TF‑BGA package rated for -40°C to 85°C, this 128 Mbit SDRAM is targeted at engineers integrating parallel SDRAM into constrained board layouts or industrial environments where standard SDRAM features and deterministic timing are required.

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