IS42S16800E-75ETLI

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 321 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S16800E-75ETLI – IC DRAM 128MBIT PAR 54TSOP II

The IS42S16800E-75ETLI is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface. It implements a fully synchronous, quad-bank architecture with signals referenced to the rising edge of the clock to support pipelined high-speed data transfer.

Designed for systems requiring a 54-pin TSOP II package and industrial temperature operation, this device delivers programmable timing and burst options, low access latency, and standard 3.3 V supply operation for integration into compact embedded and industrial applications.

Key Features

  • Memory Core and Organization — 128 Mbit SDRAM organized as 8M × 16 and internally configured as four banks for hidden row access and precharge.
  • Synchronous Interface & Clocking — Fully synchronous operation with all signals referenced to the positive clock edge; supports clock frequencies up to 133 MHz for the -75E speed grade.
  • Low Latency Access — Access time from clock down to 5.4 ns (documented for the -75E configuration), with programmable CAS latency options (2 or 3 clocks) to match system timing.
  • Burst Operation & Sequencing — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequences (sequential or interleave) with burst termination via stop or precharge commands.
  • Refresh and Power Modes — Auto Refresh (CBR) and Self Refresh support with 4096 refresh cycles every 64 ms; includes power-down and power-saving modes.
  • Interface Levels — LVTTL signaling for command and address inputs consistent with standard SDRAM interfaces.
  • Power Supply — Designed for 3.3 V operation; device supply range listed as 3.0 V to 3.6 V in the product specification.
  • Package and Mounting — 54-pin TSOP II package (0.400" / 10.16 mm width) suitable for compact board layouts.
  • Temperature Range — Industrial temperature availability with operating range from −40 °C to 85 °C (TA).

Typical Applications

  • Systems requiring compact footprint memory — Boards needing a 54-TSOP II mounted SDRAM with 128 Mbit density and parallel interface benefit from the package and organization.
  • High-throughput synchronous memory needs — Designs that require synchronous, burst-capable DRAM operation at up to 133 MHz and programmable burst/sequence options.
  • Industrial-temperature designs — Embedded systems that must operate across −40 °C to 85 °C can use this device for memory storage within that thermal envelope.
  • Low-latency access requirements — Applications that rely on short access times (5.4 ns from clock for the -75E grade) and selectable CAS latency settings.

Unique Advantages

  • Flexible timing configuration: Programmable CAS latency (2 or 3 clocks) and selectable burst lengths let designers tune performance for specific system timing.
  • Predictable low-latency behavior: Documented 5.4 ns access time from clock for the -75E speed grade supports designs with tight timing budgets.
  • Robust refresh management: Auto and self-refresh modes with 4096 refresh cycles every 64 ms reduce design complexity for data retention under varying operating conditions.
  • Standard 3.3 V operation: Nominal 3.3 V supply support (3.0–3.6 V range) aligns with common SDRAM power rails for straightforward integration.
  • Compact TSOP II packaging: The 54-pin TSOP II (10.16 mm width) enables dense PCB layouts while maintaining a parallel SDRAM interface.
  • Industrial temperature availability: Specified operation from −40 °C to 85 °C provides suitability for thermally demanding environments.

Why Choose IS42S16800E-75ETLI?

The IS42S16800E-75ETLI positions itself as a compact, synchronous 128 Mbit DRAM solution that combines configurable burst and latency options with documented low access times and industrial temperature operation. Its 54-TSOP II package and standard 3.3 V supply make it straightforward to integrate into space-constrained boards that require parallel SDRAM functionality.

This device is suited for designs that need predictable synchronous performance, flexible burst sequencing, and reliable refresh behavior. The combination of programmable timing, low-latency access, and industrial temperature rating delivers scalable utility for embedded and industrial memory subsystems.

Request a quote or contact sales to obtain pricing, availability, and technical support for the IS42S16800E-75ETLI.

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