IS42S16800E-75ETLI-TR

The IS42S16800E-75ETLI-TR is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a quad‑bank architecture and fully synchronous interface referenced to the rising edge of the clock. This device delivers low access latency and programmable burst options for systems requiring parallel high‑speed memory.

Designed for 3.3 V memory systems with LVTTL signaling and offered in a 54‑pin TSOP II package, the IS42S16800E-75E variant targets applications that need compact board-level SDRAM with industrial temperature availability (–40 °C to 85 °C).

Key Features

• Memory Core 128 Mbit SDRAM organized as 8M × 16 with internal quad‑bank configuration (2M × 16 × 4 banks) for concurrent bank operations.
• Synchronous Pipeline Architecture Fully synchronous operation with all signals referenced to the positive clock edge enabling predictable, clocked data transfers.
• Performance Guaranteed clock frequency for this -75E grade at 133 MHz and access timing down to 5.4 ns, supporting low‑latency memory access.
• Programmable Burst and Latency Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave). CAS latency is programmable (2 or 3 clocks).
• Refresh and Power Modes Supports Auto Refresh (CBR) and Self Refresh with 4096 refresh cycles every 64 ms, plus power‑down options for power management.
• Interface and Signaling LVTTL compatible interface and parallel memory bus for integration into standard SDRAM memory subsystems.
• Supply and Temperature Designed for 3.3 V systems (operating supply range 3.0 V – 3.6 V) with industrial temperature availability from –40 °C to 85 °C.
• Package 54‑pin TSOP II package (0.400", 10.16 mm width) for compact board footprint and standard assembly processes.

Typical Applications

• Embedded Systems Used as parallel SDRAM storage in embedded controllers and modules that require compact, board‑mounted volatile memory.
• Industrial Control Suited for control and data buffering in industrial equipment, leveraging the –40 °C to 85 °C operating range.
• Networking and Communications Provides burstable, low‑latency storage for packet buffering and temporary data storage in network devices that use parallel SDRAM.
• Consumer and Appliance Electronics Integrates into consumer devices that require standardized, synchronous parallel DRAM in a small TSOP II package.

Unique Advantages

• Synchronous Quad‑Bank Design: Internal four‑bank organization enables bank interleaving and improved throughput for pipelined read/write operations.
• Flexible Timing Control: Programmable CAS latency and burst length allow designers to tune performance versus system timing and throughput needs.
• Industrial Temperature Availability: Rated for –40 °C to 85 °C operation, supporting deployment in temperature‑sensitive and industrial environments.
• Compact TSOP II Package: 54‑pin TSOP II footprint (10.16 mm width) simplifies board layout while providing the pinout of a standard parallel SDRAM device.
• Low Access Latency: Access times as low as 5.4 ns support applications requiring fast read/write cycles.
• Standard 3.3 V Operation: Designed for 3.3 V memory systems with an indicated supply range of 3.0–3.6 V for compatibility with common memory rails.

Why Choose IS42S16800E-75ETLI-TR?

The IS42S16800E-75ETLI-TR offers a compact, industrial‑temperature SDRAM solution with a synchronous quad‑bank architecture, programmable burst and latency options, and low access times. Its 54‑pin TSOP II package and LVTTL interface make it suitable for systems that require board‑level parallel SDRAM with predictable timing and refresh behavior.

This device is suited to designers and procurement teams specifying parallel SDRAM for embedded, industrial, networking, or consumer applications where a balance of performance, configurability, and temperature robustness is required.

Request a quote or submit an inquiry for pricing and availability of IS42S16800E-75ETLI-TR to obtain product lead times and ordering information.