IS42S16800E-75ETL

The IS42S16800E-75ETL is a 128Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface in a 54‑pin TSOP II package. The device implements a fully synchronous pipeline architecture with internal bank management and supports programmable burst operations and CAS latency options.

This device is intended for systems that require a 128Mbit parallel SDRAM solution with defined timing and refresh behavior, providing measured performance (133 MHz Clock/5.4 ns access time on the -75E option), programmable burst sequencing, and built‑in refresh and self‑refresh functions.

Key Features

• Memory Density & Organization — 128 Mbit density configured as 8M × 16 with quad-bank internal organization.
• Synchronous SDRAM Architecture — Fully synchronous operation with all inputs and outputs referenced to the rising clock edge and pipeline architecture for high-speed transfers.
• Clock & Timing (‑75E option) — Supports a 133 MHz clock frequency with an access time from clock of 5.4 ns (CAS latency = 2 for the -75E variant).
• Programmable Burst & CAS — Programmable burst lengths (1, 2, 4, 8, full page), sequential or interleave burst sequences, and selectable CAS latency (2 or 3 clocks as supported by device options).
• Refresh & Power Modes — Auto Refresh (CBR) and Self Refresh supported with 4096 refresh cycles every 64 ms; includes power‑down capability.
• Interface & I/O — LVTTL interface signaling and parallel memory interface for board‑level memory subsystems.
• Supply & Mounting — Specified supply range of 3.0 V to 3.6 V; standard 54‑pin TSOP (0.400", 10.16 mm width) TSOP II package for surface mounting.
• Operating Temperature — Commercial operating range of 0°C to 70°C (TA).

Typical Applications

• Embedded memory subsystems — Provides 128 Mbit of synchronous parallel DRAM capacity for designs requiring organized 8M × 16 memory.
• Board‑level memory expansion — Standard 54‑pin TSOP II package enables integration into PCBs for parallel SDRAM expansion.
• High‑throughput buffering — Programmable burst lengths and synchronous interface support burst read/write buffering at the specified clock and access timings.

Unique Advantages

• Deterministic synchronous timing — All signals referenced to the clock edge and pipeline architecture enable predictable timing behavior tied to the 133 MHz/5.4 ns specification for the -75E variant.
• Flexible data access — Programmable burst lengths and sequence options plus selectable CAS latency allow tuning for system timing and throughput.
• Refresh and power management — Auto Refresh and Self Refresh modes with defined refresh rate (4096 cycles/64 ms) simplify system refresh management and power control.
• Board-friendly package — 54‑pin TSOP II (10.16 mm width) offers a compact, surface‑mount package compatible with standard PCB assembly processes.
• Wide supply tolerance — Operates across a 3.0 V to 3.6 V supply range with device operation defined at 3.3 V in the datasheet.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The IS42S16800E-75ETL delivers a compact, parallel 128Mbit SDRAM option with synchronous pipeline architecture, programmable burst/CAS options, and defined timing (133 MHz / 5.4 ns on the -75E part). Its combination of refresh management, LVTTL interface, and a standard 54‑pin TSOP II package makes it suitable for designs that require predictable, board‑level parallel memory with configurable access patterns.

This device is well suited for engineers specifying a commercial‑temperature parallel SDRAM solution where known timing, refresh behavior, and package footprint are required. Its feature set supports straightforward integration into memory subsystems that rely on synchronous, burst‑capable DRAM.

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