IS42S16800E-75EBLI-TR

The IS42S16800E-75EBLI-TR is a 128Mbit synchronous DRAM organized as 8M × 16 with a quad-bank, pipelined architecture for high-speed synchronous data transfer. It implements fully synchronous operation with all signals referenced to the rising edge of the clock and supports programmable burst lengths and sequences for flexible memory access patterns.

This device targets systems requiring parallel SDRAM storage with LVTTL signaling, operating over an industrial temperature range and supplied around standard 3.3 V rails, providing predictable performance for industrial and high-speed memory subsystems.

Key Features

• Core Architecture  Quad-bank SDRAM with internal bank architecture to hide row access/precharge and enable pipelined high-speed transfers.
• Memory Organization  128 Mbit capacity organized as 8M × 16 (2M × 16 × 4 banks) to support wide parallel data paths.
• Clock and Timing  Supports clock frequencies including 133 MHz for the -75E device; programmable CAS latency of 2 or 3 clocks and access time as low as 5.4 ns (from clock) for relevant configurations.
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence options (sequential/interleave) with burst termination via stop or precharge commands.
• Refresh and Power Modes  Auto Refresh (CBR), Self Refresh, and 4,096 refresh cycles every 64 ms to maintain data integrity.
• Interface  LVTTL-compatible parallel interface for synchronous read/write operations and random column addressing every clock cycle.
• Power  Designed for 3.0 V to 3.6 V supply range; datasheet specifies 3.3 V for VDD and VDDQ on the IS42S16800E variant.
• Package and Mounting  54-ball TF-BGA (8×8) package for board-level mounting and compact system integration.
• Operating Temperature  Industrial temperature availability with specified operating range of −40 °C to 85 °C (TA).

Typical Applications

• Industrial Systems  Industrial designs that require wide parallel SDRAM storage with guaranteed operation from −40 °C to 85 °C and robust refresh behavior.
• High-Speed Memory Subsystems  Systems that need synchronous burst read/write capability and programmable CAS latency for latency/performance tuning.
• Embedded DRAM Interfaces  Embedded memory designs that use LVTTL parallel interfaces and require a 128 Mbit density in a compact 54‑TFBGA package.

Unique Advantages

• Flexible Burst Control: Programmable burst lengths and sequences enable tailoring transfer patterns to application access profiles.
• Low Access Latency: Access times down to 5.4 ns (from clock) and selectable CAS latency help meet tight timing requirements.
• Robust Refresh Support: Auto and self-refresh modes with defined refresh cycles simplify memory maintenance and system reliability.
• Industrial Temperature Range: Specified operation from −40 °C to 85 °C supports deployment in temperature-challenged environments.
• Compact BGA Package: 54-ball TF‑BGA (8×8) enables a small footprint implementation while providing a parallel data interface.
• Standard Supply Compatibility: Operates across a 3.0 V–3.6 V window with datasheet-specified 3.3 V VDD/VDDQ for standard system rails.

Why Choose IS42S16800E-75EBLI-TR?

The IS42S16800E-75EBLI-TR delivers a 128 Mbit synchronous DRAM solution with programmable timing, burst capability, and quad-bank pipelined architecture to support high-speed parallel memory requirements. Its combination of selectable CAS latency, low access times, and robust refresh modes makes it suitable for systems demanding predictable synchronous DRAM behavior.

This device is well suited to engineers and procurement teams building industrial and embedded memory subsystems that require a compact TF‑BGA package, LVTTL interface compatibility, and operation across −40 °C to 85 °C. The documented electrical and timing parameters support integration into designs where controlled timing and refresh behavior are critical.

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