IS42S16800E-6TLI-TR

The IS42S16800E-6TLI-TR is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface. It implements a fully synchronous, pipelined architecture with internal quad-bank organization to support high-speed data transfer and predictable timing for embedded and industrial memory subsystems.

Designed for system memory and buffering applications, this device offers programmable burst lengths and sequences, AUTOREFRESH and SELF REFRESH modes, and industrial temperature availability for robust operation across a wide range of environments.

Key Features

• Memory Core / Organization  128 Mbit SDRAM organized as 8M × 16 with quad-bank architecture (4 banks) to support concurrent operations and efficient row access.
• Synchronous Performance  Fully synchronous operation with all signals referenced to the rising clock edge; rated for 166 MHz clock frequency (device -6 speed grade) and typical access time of 5.4 ns at CAS latency = 3.
• Programmable Burst and Latency  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (Sequential/Interleave); selectable CAS latency of 2 or 3 clocks for timing flexibility.
• Refresh and Power Modes  Supports AUTO REFRESH (CBR) and SELF REFRESH with 4096 refresh cycles every 64 ms to maintain data integrity and support low-power retention.
• Interface and Signaling  Parallel memory interface with LVTTL signaling for control and data lines, suitable for synchronous memory subsystem designs.
• Voltage and Power  Operates from 3.0 V to 3.6 V (3.3 V nominal supply according to device specification), with separate VDD and VDDQ supply conventions documented for the family.
• Package and Temperature  54-pin TSOP II package (0.400", 10.16 mm width) and industrial operating temperature range of −40 °C to 85 °C (TA) for deployment in harsh environments.

Typical Applications

• Embedded system memory  Use as system DRAM for embedded controllers and processors that require 128 Mbit synchronous memory with predictable timing and burst access.
• Industrial control and automation  Industrial-temperature availability (−40 °C to 85 °C) makes this device suitable for memory buffering and data logging in control and automation equipment.
• Data buffering and packet processing  Quad-bank organization and programmable burst operation enable efficient buffering and sequential/interleaved access patterns in communication and buffering applications.
• Power-managed systems  SELF REFRESH and AUTO REFRESH support allow the device to retain data while reducing active power in systems that require occasional low-power retention.

Unique Advantages

• Synchronous pipelined architecture: All inputs and outputs are registered to the positive clock edge to enable predictable timing and high-speed data transfer.
• Flexible timing control: Programmable CAS latency (2 or 3 clocks) and multi-length burst options provide design flexibility for timing and throughput trade-offs.
• Quad-bank organization: Internal bank structure hides row access/precharge cycles and supports more efficient concurrent access patterns.
• Robust refresh management: Supports AUTO REFRESH and SELF REFRESH with 4096 refresh cycles every 64 ms to ensure data integrity across operating conditions.
• Industrial temperature qualified: Rated for −40 °C to 85 °C (TA), enabling deployment in temperature-challenging environments.
• Standard 54‑TSOP II package: Compact 54-pin TSOP II (0.400", 10.16 mm width) packaging simplifies board-level integration in space-constrained designs.

Why Choose IS42S16800E-6TLI-TR?

The IS42S16800E-6TLI-TR delivers a balanced combination of synchronous SDRAM performance, flexible timing/burst options, and industrial temperature operation in a compact 54‑pin TSOP II package. Its quad-bank, pipelined architecture and programmed refresh capabilities make it well suited for embedded, industrial, and buffering applications that require deterministic timing and reliable data retention.

This device is targeted at designers needing a verified 128 Mbit SDRAM solution with 166 MHz operation (device -6), programmable latency and burst control, and industry-relevant temperature range—providing a scalable, reliable memory building block for mid-density system designs.

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