IS42S16800E-6TLI

The IS42S16800E-6TLI is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface in a 54-pin TSOP II package. It implements a quad-bank, fully synchronous architecture with registered I/O referenced to the rising edge of a system clock.

Designed for systems requiring compact, high-speed volatile memory, the device targets embedded and industrial applications where 3.3 V memory, selectable CAS latency, and support for burst operations and refresh modes are required.

Key Features

• Memory Architecture  128 Mbit SDRAM organized as 8M × 16 with internal quad-bank configuration for concurrent bank operations.
• Performance  166 MHz clock frequency (–6 speed grade) with an access time of 5.4 ns (CAS latency = 3).
• Synchronous Interface  Fully synchronous operation with all signals referenced to the positive clock edge and LVTTL I/O signaling.
• Burst and Latency Options  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency (2 or 3 clocks).
• Refresh and Power Modes  Supports Auto Refresh (CBR), Self Refresh and 4096 refresh cycles every 64 ms for standard DRAM refresh management.
• Power  Designed for 3.3 V memory systems; supply range specified as 3.0 V to 3.6 V in product specifications.
• Package and Temperature  Available in a 54-pin TSOP II package (0.400", 10.16 mm width) and rated for an operating temperature range of −40 °C to 85 °C (TA).

Typical Applications

• Embedded Systems  Use as main or working memory for microcontroller- or processor-based designs requiring parallel SDRAM storage.
• Industrial Control  Suitable for industrial equipment that needs 3.3 V SDRAM with an extended operating temperature range (−40 °C to 85 °C).
• Consumer Electronics  Integration in compact, board-level designs where a 54‑pin TSOP II package and burst-read/write capabilities are required.
• Communication Equipment  Use in devices that benefit from synchronous, low-latency burst transfers and programmable CAS for performance tuning.

Unique Advantages

• Quad‑Bank, High‑Speed Architecture: Internal quad-bank configuration enables pipeline access and higher throughput in burst operations.
• Configurable Performance: Selectable CAS latency (2 or 3) and burst length/sequence let designers tune latency and throughput to system needs.
• Standard 3.3 V Operation: Compatible with common 3.3 V memory systems and specified for a 3.0 V to 3.6 V supply range for system flexibility.
• Industrial Temperature Range: Rated for −40 °C to 85 °C (TA), supporting deployment in temperature-challenging environments.
• Compact TSOP II Package: 54-pin TSOP II (0.400", 10.16 mm width) offers a small board footprint for space-constrained designs.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The IS42S16800E-6TLI delivers a straightforward, fully synchronous 128 Mbit SDRAM solution with programmable latency and burst features that let engineers balance access time and throughput. Its 166 MHz speed grade, LVTTL interface, and 8M × 16 organization make it suitable for compact embedded and industrial designs that require reliable parallel SDRAM in a 54-pin TSOP II package.

This device is a practical choice for designs needing standard 3.3 V operation, industry-grade temperature support, and conventional DRAM refresh and power modes (Auto Refresh, Self Refresh), providing predictable performance and integration in systems that use synchronous DRAM memory.

Request a quote or contact sales to obtain pricing and availability for IS42S16800E-6TLI and to discuss quantity, lead time, or technical questions related to integration into your design.