IS42S16800E-6TL

The IS42S16800E-6TL is a 128 Mbit synchronous DRAM device organized as 8M × 16 with a parallel memory interface and quad-bank architecture. As a fully synchronous DRAM, all I/O and control signals are referenced to the rising edge of the clock, with the -6 speed grade supporting a 166 MHz clock and an access time of 5.4 ns (CAS latency = 3).

This device provides programmable burst lengths and sequences, LVTTL I/O, and built-in refresh modes (auto and self refresh), making it suitable for systems that require deterministic, clock-driven memory behavior in a compact 54-pin TSOP II package. It operates from a 3.0 V to 3.6 V supply and across an ambient temperature range of 0°C to 70°C.

Key Features

• Core & Architecture Quad-bank SDRAM internally configured as multiple banks to enable pipelined access and improved throughput.
• Memory Organization 128 Mbit capacity organized as 8M × 16, providing wide data paths for parallel system interfaces.
• Performance -6 device grade supports a 166 MHz clock frequency with a 5.4 ns access time (CAS latency = 3); clock frequency options also include 200, 143 and 133 MHz across device grades.
• Timing & Burst Control Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); programmable CAS latency of 2 or 3 clocks.
• Refresh & Power Modes Supports Auto Refresh and Self Refresh with 4096 refresh cycles every 64 ms; includes power-down features for reduced standby power.
• Interface & Signaling LVTTL-compatible interface and fully synchronous control—all signals registered on the positive clock edge.
• Power Supply Operates from a 3.0 V to 3.6 V supply range (VDD/VDDQ documented as 3.3 V in device specification).
• Package & Temperature Available in a 54-pin TSOP II package (0.400", 10.16 mm width) with an operating ambient temperature range of 0°C to 70°C.

Unique Advantages

• Deterministic synchronous timing: Fully synchronous design with all signals referenced to the clock ensures predictable timing for clocked systems.
• Flexible burst operation: Programmable burst lengths and sequences simplify data transfer tuning for different access patterns.
• Built-in refresh management: Auto and self refresh support with defined refresh cycle rates reduce external refresh handling.
• Wide parallel data path: 8M × 16 organization provides a wider data bus for parallel system architectures.
• Compact TSOP II footprint: 54-pin TSOP II package enables integration into space-constrained board designs.
• Standard supply compatibility: 3.0 V to 3.6 V operation aligns with common 3.3 V memory system rails.

Why Choose IS42S16800E-6TL?

The IS42S16800E-6TL offers a combination of synchronous, high-speed operation and configurable burst/timing options in a compact TSOP II package. Its 128 Mbit, 8M × 16 organization and quad-bank architecture provide throughput and flexibility for designs requiring parallel SDRAM with deterministic clocked behavior.

This device is suited to designers who need a 3.3 V-compatible SDRAM solution with programmable latency and refresh features, predictable access timing (5.4 ns at the -6 grade), and a small footprint for board-level integration. The documented refresh and power modes support robust operation in systems that manage memory power and timing precisely.

Request a quote or contact sales to discuss pricing, availability, and volume options for the IS42S16800E-6TL.