IS42S16800E-6BLI-TR

The IS42S16800E-6BLI-TR is a 128Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface. It implements a quad-bank, fully synchronous pipeline architecture with all signals referenced to the rising edge of the clock for high-speed, deterministic access.

This device targets embedded and industrial applications that require a compact, board-mounted SDRAM solution with programmable burst control, refresh capabilities and support for industrial temperature operation.

Key Features

• Core & Architecture Quad-bank synchronous DRAM with pipeline architecture; all inputs and outputs are registered on the positive clock edge for predictable timing.
• Memory Organization 128 Mbit capacity organized as 8M × 16, providing wide data paths for parallel memory designs.
• Performance & Timing 166 MHz clock frequency (part -6 speed grade) with CAS latency options of 2 and 3 clocks and an access time of 5.4 ns (CAS latency = 3).
• Burst Control & Sequencing Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (Sequential/Interleave) for flexible throughput tuning.
• Refresh & Power Modes Supports Auto Refresh (CBR) and Self Refresh with 4096 refresh cycles every 64 ms for data retention and power management.
• Interface LVTTL-compatible control signals and a parallel memory interface for integration into synchronous system designs.
• Power Voltage supply range 3.0 V to 3.6 V (VDD/VDDQ typically 3.3 V as specified in device documentation).
• Package & Mounting 54-ball TF‑BGA (8 × 8) package for compact board-level integration.
• Temperature Range Industrial operating temperature range: −40 °C to +85 °C.

Typical Applications

• Embedded Systems High-speed parallel SDRAM for buffering and working memory in embedded controllers and modules.
• Industrial Control Suitable for industrial electronics requiring operation across −40 °C to +85 °C with synchronous, deterministic memory timing.
• Data Buffers and Frame Stores Parallel 16-bit data organization and programmable burst modes support burst read/write buffering in data-path applications.

Unique Advantages

• Synchronous Pipeline Architecture: Registered I/O on the rising clock edge delivers predictable timing for high-speed system designs.
• Flexible Burst and CAS Control: Programmable burst lengths, burst sequencing and selectable CAS latency (2, 3) allow designers to tune throughput and latency.
• Built-in Refresh Management: Auto and self refresh with 4096 cycles per 64 ms reduce system refresh overhead and support power management modes.
• Industrial Temperature Rated: −40 °C to +85 °C operating range supports deployment in temperature-critical environments.
• Compact TF‑BGA Package: 54-ball TF‑BGA (8×8) minimizes board footprint while enabling high-density mounting.
• Standard 3.3 V Operation: 3.0–3.6 V supply range (typical 3.3 V) aligns with common SDRAM power rails.

Why Choose IS42S16800E-6BLI-TR?

The IS42S16800E-6BLI-TR provides a 128 Mbit, fully synchronous DRAM solution with configurable burst behavior, selectable CAS latency and built-in refresh modes—features that simplify timing control and data throughput tuning in parallel-memory systems. Its TF‑BGA footprint and industrial temperature rating make it suitable for space-constrained boards and temperature-demanding deployments.

Backed by manufacturer device documentation, this SDRAM is appropriate for designers seeking a compact, deterministic parallel memory component for embedded, industrial, and data buffering applications that require 3.3 V operation and predictable synchronous timing.

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