IS42S16800E-6BL-TR

The IS42S16800E-6BL-TR is a 128Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a quad-bank architecture and fully synchronous, positive-edge referenced clocking. It is designed for high-speed, pipelined data transfer and supports programmable burst operations and CAS latency.

This device operates with a 3.3V VDD/VDDQ reference and an operating voltage range of 3.0V to 3.6V, supports LVTTL signaling, and is supplied in a 54-ball TF-BGA (8×8) package with an operating ambient temperature range of 0°C to 70°C.

Key Features

• Core Architecture  Quad-bank SDRAM with internal bank logic to hide row access and precharge; all inputs and outputs are referenced to the rising edge of CLK.
• Memory Organization  128 Mbit capacity organized as 8M × 16 (2M × 16 × 4 banks), with each 33,554,432-bit bank organized as 4,096 rows by 512 columns by 16 bits.
• Clocking and Timing  -6 speed grade supports a clock frequency of 166 MHz and an access time from clock of 5.4 ns (CAS latency = 3); CAS latency is programmable (2 or 3 clocks).
• Burst and Access Modes  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); burst read/write and burst read/single write operations; burst termination via burst stop and precharge.
• Refresh and Power Management  Supports Auto Refresh (CBR) and Self Refresh modes with 4096 refresh cycles every 64 ms; includes power-down capability.
• Signaling and Interface  Parallel memory interface with LVTTL-compatible inputs/outputs for synchronous system integration.
• Power  Device references VDD and VDDQ at 3.3V and an operating supply range of 3.0V to 3.6V as specified.
• Package and Temperature  54-ball TF-BGA (8×8) package; specified ambient operating temperature range 0°C to 70°C.

Typical Applications

• High-speed system memory  Use as synchronous parallel DRAM where 128 Mbit density and 166 MHz clocking meet system memory requirements.
• Data buffering and burst transfers  Programmable burst lengths and burst read/write capability support burst-oriented buffering and data streaming.
• 3.3V memory subsystems  Designed for integration into systems using 3.3V VDD/VDDQ and LVTTL signal levels.

Unique Advantages

• Programmable latency and burst control: CAS latency selectable (2 or 3 clocks) and configurable burst length/sequence enable matching to system timing and access patterns.
• High-speed synchronous operation: 166 MHz clock support (–6 grade) with 5.4 ns access time from clock for timely data transfer in pipelined architectures.
• Quad-bank architecture: Internal bank structure hides row access/precharge to improve throughput for interleaved access patterns.
• Comprehensive refresh modes: Auto Refresh and Self Refresh with 4096 cycles per 64 ms provide standard SDRAM data retention and power management options.
• Robust physical footprint: 54-ball TF-BGA (8×8) package offering a compact form factor for board-level mounting at the specified temperature range.

Why Choose IC DRAM 128MBIT PAR 54TFBGA?

The IS42S16800E-6BL-TR provides a compact 128 Mbit synchronous DRAM solution with programmable latency, flexible burst operation, and quad-bank architecture for improved throughput in synchronous systems. Its 166 MHz speed grade, LVTTL interface, and 3.3V VDD/VDDQ reference make it suitable where pipelined, high-speed parallel memory is required.

With support for Auto and Self Refresh, a defined operating voltage range of 3.0V–3.6V, and a 54-ball TF-BGA package, this device addresses designs that need deterministic SDRAM behavior, standard refresh management, and a small package footprint.

Request a quote or submit a pricing inquiry for the IS42S16800E-6BL-TR to get detailed procurement information and availability for your design requirements.