IS42S16800E-75ETL-TR

The IS42S16800E-75ETL-TR is a 128 Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution Inc. It implements a pipelined, fully synchronous architecture with internal quad-bank organization and all signals referenced to the rising clock edge.

Designed for parallel memory systems, the device provides configurable burst operation, programmable CAS latency, and standard 54-pin TSOP II packaging. Key value propositions include high-speed synchronous operation, flexible timing and burst control, and support for 3.3 V-class supply ranges.

Key Features

• Core & Architecture  Fully synchronous SDRAM with pipeline architecture; internal quad-bank organization enables hidden row access/precharge to improve data throughput.
• Memory Density & Organization  128 Mbit capacity organized as 8M × 16 (2M ×16 ×4 banks), providing 134,217,728 bits of storage in a single device.
• Performance & Timing  -75E speed grade supports 133 MHz operation (CAS Latency = 2) with an access time of 5.4 ns; programmable CAS latency options of 2 or 3 clocks.
• Interface & Burst Control  Parallel memory interface with LVTTL signaling; programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); random column address every clock cycle.
• Power & Refresh  Designed for 3.3 V VDD/VDDQ operation and specified supply range 3.0 V to 3.6 V; supports Auto Refresh, Self Refresh and power-down modes with 4096 refresh cycles every 64 ms.
• Package & Temperature  Available in a 54-pin TSOP II package (0.400", 10.16 mm width) with an operating temperature range of 0 °C to 70 °C (TA).
• Command & Control  Supports burst read/write and burst read/single write operations with burst termination via burst stop and precharge commands.
• Signal Timing  All inputs and outputs are registered on the positive edge of CLK; the device provides timing parameters and options to match system timing requirements.

Unique Advantages

• Flexible timing control: Programmable CAS latency (2 or 3) and selectable burst lengths let designers balance latency and throughput.
• High-speed synchronous operation: Pipeline architecture and rising-edge clocked I/O provide deterministic timing for high-rate parallel transfers (133 MHz for the -75E grade).
• Power management modes: Auto Refresh, Self Refresh and power-down modes help reduce power during idle periods while maintaining data integrity.
• Standard package footprint: 54-pin TSOP II (0.400", 10.16 mm) fits existing PCB layouts targeting TSOP II memory devices.
• Quad-bank organization: Four internal banks enable hidden row access/precharge to improve effective memory access efficiency.

Why Choose IS42S16800E-75ETL-TR?

The IS42S16800E-75ETL-TR is positioned for designs that require a 128 Mbit synchronous DRAM with configurable timing, burst control and standard TSOP II packaging. Its synchronous, pipelined architecture and quad-bank organization support predictable, high-speed parallel memory transfers while offering flexible power and refresh options.

This device is suited to system designs that require a 3.3 V-class SDRAM with programmable CAS latency and burst features, and for engineers who need a compact 54-pin TSOP II solution with documented timing and refresh behavior.

Request a quote or submit an inquiry for IS42S16800E-75ETL-TR to receive pricing, availability and lead-time information.