IS42S16800E-7BLI

The IS42S16800E-7BLI is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface and LVTTL signaling. It implements a quad-bank, fully synchronous architecture optimized for high-speed, pipelined data transfer in digital systems.

Targeted at designs that require compact, board-level memory, the device offers programmable burst operation, selectable CAS latency, and industry temperature availability to support robust system-level integration and performance predictability.

Key Features

• Memory Core 128 Mbit SDRAM organized as 8M × 16 with a quad-bank internal configuration for pipelined access and efficient row/column operations.
• Performance -7 speed grade with a clock frequency of 143 MHz and an access time of 5.4 ns (CAS latency = 3), enabling low-latency transfer when configured for CL=3.
• Programmable Burst and Latency Supports programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); CAS latency selectable at 2 or 3 clocks to match system timing.
• Refresh and Power Modes Auto Refresh and Self Refresh supported with 4096 refresh cycles every 64 ms, plus power-down capability for power-managed applications.
• Interface and Signaling Parallel memory interface with LVTTL-compatible I/O signaling for straightforward integration with synchronous system clocks.
• Supply Voltage Operates with VDD/VDDQ at 3.3 V and a specified supply range of 3.0 V to 3.6 V.
• Package & Mounting 54-ball TF-BGA package (8 × 8) in a compact 54-TFBGA footprint suitable for space-constrained boards.
• Operating Range Industrial temperature availability with an operating ambient temperature range of −40 °C to 85 °C (TA).

Typical Applications

• Industrial Memory Subsystems Use where industrial temperature operation and robust refresh modes are required for reliable system memory.
• High-Speed Data Buffering Local frame or data buffering in systems that benefit from 143 MHz clock operation and low access latency (5.4 ns CL=3).
• Embedded System Memory Parallel SDRAM expansion for synchronous digital designs needing a 128 Mbit density with programmable burst behavior and selectable CAS latency.

Unique Advantages

• Flexible Performance Scaling: -7 speed grade provides 143 MHz clock operation and 5.4 ns access time (CL=3) to balance throughput and latency requirements.
• Programmable Transfer Modes: Configurable burst length and sequence plus selectable CAS latencies allow tuning for diverse access patterns and system timings.
• Power and Refresh Control: Auto Refresh, Self Refresh, and power-down modes help manage power consumption while maintaining data integrity via 4096 refresh cycles every 64 ms.
• Industrial Temperature Support: Rated for −40 °C to 85 °C ambient operation to meet temperature-hardened deployment needs.
• Compact BGA Footprint: 54-TFBGA (8×8) package enables higher board density and simplified routing in space-constrained designs.
• Standard 3.3 V Supply: VDD and VDDQ at 3.3 V with a 3.0 V–3.6 V supply window aligns with common system power rails.

Why Choose IC DRAM 128MBIT PAR 54TFBGA?

The IS42S16800E-7BLI delivers a balanced combination of density, synchronous performance, and configurability for systems that require predictable, low-latency SDRAM. Its programmable burst features and selectable CAS latency make it adaptable to a variety of memory access patterns, while industrial temperature availability and compact TF-BGA packaging support deployment in constrained or temperature-challenging environments.

This device is suitable for designers and procurement teams seeking a 128 Mbit parallel SDRAM solution with clear, verifiable timing and refresh characteristics, compact package options, and industry-oriented operating range.

Request a quote or submit an RFQ to receive pricing and availability information for IS42S16800E-7BLI and to discuss integration details for your design.