IS42S16800E-7TL-TR

The IS42S16800E-7TL-TR is a 128 Mbit synchronous DRAM (SDRAM) device organized as 8M × 16 with a parallel LVTTL interface. It implements a quad-bank, fully synchronous pipeline architecture to deliver predictable, clock-referenced memory access for board-level systems requiring 128 Mbit DRAM in a compact 54-pin TSOP II package.

Designed for 3.0–3.6 V systems (3.3 V VDD specified in the device datasheet) and a specified operating ambient range of 0°C to 70°C, this SDRAM supports high-throughput burst operations and programmable timing to match system performance requirements.

Key Features

• Core Memory 128 Mbit SDRAM organized as 8M × 16, implemented as a quad-bank DRAM for concurrent row/column operations.
• Synchronous, Clocked Interface Fully synchronous operation with all signals referenced to the rising edge of CLK; supported clock frequencies include 200, 166, 143 and 133 MHz (–7 speed grade corresponds to 143 MHz in the timing table).
• Low Access Time CAS latency and timing options provide access times down to 5.4 ns (CAS Latency = 3 at the –7 grade), enabling low-latency read operations.
• Programmable Burst and CAS Options Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (Sequential/Interleave); CAS latency programmable to 2 or 3 clocks.
• Refresh and Power Modes Supports Auto Refresh, Self Refresh and CBR Auto Refresh; device requires 4096 refresh cycles every 64 ms as specified.
• Interface and Signaling LVTTL signaling for inputs/outputs and a parallel memory interface optimized for board-level integration.
• Supply and Package Supply range 3.0–3.6 V with 3.3 V VDD indicated in the datasheet; supplied in a 54-pin TSOP II package (0.400", 10.16 mm width) for compact PCB footprints.

Typical Applications

• Board-level SDRAM expansion Provides 128 Mbit of synchronous DRAM capacity for systems requiring parallel memory in a 54-pin TSOP II footprint.
• High-throughput burst buffering Programmable burst lengths and CAS latency options support burst read/write operations for systems that need efficient block transfers.
• 3.3 V memory subsystems Designed for systems operating within a 3.0–3.6 V supply range with LVTTL interface signaling.

Unique Advantages

• Flexible timing and burst control: Programmable CAS latency (2, 3) and burst length/sequence settings let designers tune latency and throughput to match system timing.
• Deterministic synchronous operation: All signals referenced to the positive clock edge yield predictable timing and simplify timing closure for clocked memory systems.
• Compact TSOP II packaging: The 54-pin TSOP II (10.16 mm width) provides a small board footprint for space-constrained designs.
• Standard 3.3 V supply compatibility: Operates within a 3.0–3.6 V supply window with 3.3 V VDD specified in the datasheet to match common system rails.
• Refresh and power management: Built-in Auto Refresh and Self Refresh modes with specified refresh cycle requirements help maintain data integrity while supporting power-saving modes.

Why Choose IS42S16800E-7TL-TR?

The IS42S16800E-7TL-TR provides a compact, fully synchronous 128 Mbit DRAM solution with programmable timing and burst features suited to systems that require predictable, clock-referenced memory performance. Its 54-pin TSOP II package and 3.0–3.6 V supply compatibility make it straightforward to integrate into board-level memory subsystems where space and standard supply voltages are considerations.

This device is appropriate for designers seeking a straightforward SDRAM component with configurable latency and burst behavior, enabling alignment with specific data-transfer and timing requirements while adhering to documented timing parameters and refresh specifications.

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