IS42S16800F-5TLI
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 798 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5 ns | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S16800F-5TLI – 128 Mbit Parallel SDRAM, 54‑TSOP II
The IS42S16800F-5TLI is a volatile SDRAM device organized as 8M × 16 for a total density of 128 Mbit. It implements a parallel memory interface and is offered in a 54‑lead TSOP II package.
Designed for systems that require synchronous DRAM storage, the device provides 200 MHz clock operation with a 5 ns access time and operates from a 3.0 V to 3.6 V supply over an ambient temperature range of −40 °C to 85 °C.
Key Features
- Memory Core 128 Mbit density organized as 8M × 16, implemented as SDRAM (volatile DRAM).
- Performance Synchronous operation with a 200 MHz clock frequency and a 5 ns access time for fast read/write cycles.
- Interface Parallel memory interface with 16‑bit data organization suitable for parallel bus memory architectures.
- Power Single supply operation from 3.0 V to 3.6 V.
- Package 54‑lead TSOP II (0.400", 10.16 mm width) supplier device package for compact board mounting.
- Operating Range Industrial ambient temperature range from −40 °C to 85 °C (TA).
Typical Applications
- Parallel memory subsystems — Use as synchronous DRAM in designs requiring a 16‑bit parallel memory interface and 128 Mbit capacity.
- Embedded controllers — Provides external SDRAM storage for processors and microcontrollers in systems that accept parallel SDRAM.
- Industrial equipment — Suitable for equipment operating across −40 °C to 85 °C where a 3.0–3.6 V SDRAM device is required.
Unique Advantages
- Parallel 16‑bit organization: 8M × 16 layout provides a straightforward 16‑bit data path for parallel memory designs.
- High-speed synchronous operation: 200 MHz clocking with 5 ns access time supports fast synchronous read/write transactions.
- Flexible supply range: 3.0 V to 3.6 V operation accommodates standard 3 V system designs.
- Compact TSOP II package: 54‑lead TSOP (0.400", 10.16 mm width) enables dense board layouts while maintaining standard package footprint.
- Wide ambient temperature: −40 °C to 85 °C range supports deployment in temperature‑sensitive environments.
Why Choose IS42S16800F-5TLI?
The IS42S16800F-5TLI delivers a practical combination of density, synchronous performance and package density for designs that require a 128 Mbit parallel SDRAM solution. Its 8M × 16 organization, 200 MHz clock capability and 5 ns access time make it suitable for systems needing deterministic, fast external memory.
With a standard 54‑lead TSOP II package, a 3.0–3.6 V supply range and an extended ambient temperature window, this device is positioned for embedded and industrial designs that require reliable SDRAM operation in compact board implementations.
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