IS42S16800F-6B
| Part Description |
IC DRAM 128MBIT PAR 54TFBGA |
|---|---|
| Quantity | 410 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S16800F-6B – IC DRAM 128MBIT PAR 54TFBGA
The IS42S16800F-6B from Integrated Silicon Solution Inc is a volatile SDRAM device providing 128 Mbit of memory organized as 8M × 16 with a parallel memory interface. It is supplied in a 54-TFBGA (8×8) package.
Key electrical and timing characteristics include a 166 MHz clock frequency, a 5.4 ns access time, and a supply voltage range of 3.0 V to 3.6 V. The device is specified for operation over a 0°C to 70°C ambient temperature range.
Key Features
- Memory Type & Organization Volatile SDRAM technology with 128 Mbit capacity arranged as 8M × 16 for 16-bit parallel transfers.
- Clock & Timing Supports a 166 MHz clock frequency with an access time of 5.4 ns for low-latency memory access.
- Interface Parallel memory interface suitable for designs requiring a standard DRAM parallel bus.
- Supply Voltage Operates from 3.0 V to 3.6 V to match common 3.0 V/3.3 V system rails.
- Package 54-TFBGA (8×8) ball-grid array package enabling compact board-level integration.
- Temperature Range Specified for ambient operation from 0°C to 70°C (TA).
Typical Applications
- Embedded memory expansion — Provides 128 Mbit of parallel SDRAM for systems requiring short-latency volatile storage with a 16-bit data bus.
- Board-level DRAM modules — Suited for designs that require a compact 54-TFBGA footprint and standard 3.0 V–3.6 V supply compatibility.
- Data buffering and frame storage — 166 MHz clock and 5.4 ns access time support applications needing predictable, high-speed buffer memory.
Unique Advantages
- Parallel 16-bit organization: Simplifies integration into systems using a 16-bit data bus and standard DRAM control signals.
- High clock rate: 166 MHz operation provides capability for faster memory transactions compared to lower-frequency alternatives.
- Predictable timing: 5.4 ns access time enables designers to size timing margins and budget latency precisely.
- Compact BGA packaging: 54-TFBGA (8×8) offers a small footprint for dense PCB layouts while retaining ball-grid connections.
- Standard supply range: 3.0 V to 3.6 V compatibility aligns with common 3.0 V/3.3 V system rails for straightforward power integration.
Why Choose IS42S16800F-6B?
The IS42S16800F-6B is positioned as a straightforward, specification-driven SDRAM option for designs requiring 128 Mbit of volatile parallel memory with defined timing and voltage characteristics. Its 8M × 16 organization, 166 MHz clock capability, and 5.4 ns access time deliver predictable performance for systems that depend on consistent DRAM timing.
Packaged in a 54-TFBGA (8×8) footprint and manufactured by Integrated Silicon Solution Inc, this device is appropriate for board-level integration where compact packaging and standard 3.0 V–3.6 V supply compatibility are required.
Request a quote or submit an inquiry to obtain pricing, lead-time, and availability information for the IS42S16800F-6B.
