IS42S16800E-7TLI-TR

The IS42S16800E-7TLI-TR is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface. It uses a pipelined, fully synchronous architecture with internal quad-bank operation to support high-speed data transfer and efficient row access/precharge hiding.

Designed for 3.3V memory systems (VDD/VDDQ = 3.3V) with an operational supply range of 3.0 V to 3.6 V and industrial temperature availability (–40°C to 85°C), this 54-pin TSOP II packaged device targets systems requiring reliable, mid‑density synchronous DRAM.

Key Features

• Memory Architecture 128 Mbit SDRAM organized as 8M × 16 with quad-bank internal configuration for parallel row/column operation and improved throughput.
• High-Speed Synchronous Operation Fully synchronous design with all signals referenced to the rising clock edge; supported clock frequency for the -7 speed grade is 143 MHz and access time from clock is 5.4 ns.
• Programmable Burst and CAS Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (Sequential/Interleave). CAS latency is programmable to 2 or 3 clocks.
• Refresh and Power Modes Auto Refresh and Self Refresh supported with 4096 refresh cycles every 64 ms; includes power‑saving power‑down functionality.
• Interface and Signaling LVTTL-compatible interface supporting random column address access every clock cycle and burst read/write operations with burst termination commands.
• Supply and Packaging Designed for 3.3V VDD/VDDQ operation (supply range 3.0–3.6V) in a 54-pin TSOP II (0.400", 10.16 mm width) package for compact board-level placement.
• Industrial Temperature Range Rated for operation from –40°C to 85°C (TA), suitable for temperature-demanding environments.

Typical Applications

• Industrial Systems Use where industrial temperature range and reliable synchronous memory operation are required.
• Embedded Memory Subsystems Suitable as main or buffer memory in 3.3V synchronous memory designs that need mid-density DRAM.
• High-Speed Parallel Data Buffers Appropriate for designs leveraging pipelined SDRAM and burst access at up to 143 MHz clock rates.

Unique Advantages

• Synchronous Pipelined Architecture: Pipeline design with all signals registered to the clock edge enables predictable timing and high throughput.
• Flexible Burst Control: Programmable burst lengths and sequences allow tuning for sequential or interleaved access patterns to match system requirements.
• Selectable CAS Latency: CAS latency programmable to 2 or 3 clocks provides trade-offs between latency and clock rate for timing optimization.
• Industry-Grade Temperature Range: Operation from –40°C to 85°C supports deployment in harsher environments where extended temperature tolerance is needed.
• Standard 54‑TSOP II Package: Compact 54-pin TSOP II footprint simplifies board-level integration in space-constrained designs.
• 3.3V Supply Compatibility: Designed for 3.3V VDD/VDDQ with a supply range of 3.0–3.6V to align with common memory power rails.

Why Choose IS42S16800E-7TLI-TR?

The IS42S16800E-7TLI-TR combines a synchronous, pipelined SDRAM architecture with flexible burst and CAS programmability to deliver a reliable mid-density memory solution for 3.3V systems. Its quad-bank organization and supported 143 MHz clock rate enable efficient high-speed data transfers while maintaining industry-temperature operation.

This device is well suited for designers needing a compact 128 Mbit DRAM in a 54‑pin TSOP II package where predictable timing, refresh management, and selectable latency/burst modes are required for embedded and industrial memory subsystems.

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