IS42S16800E-7BLI-TR

The IS42S16800E-7BLI-TR is a 128 Mbit synchronous DRAM device organized as 8M × 16 with a parallel LVTTL interface and a 54-ball TF‑BGA (8×8) package. It uses a quad‑bank, fully synchronous pipeline architecture to support high‑speed data transfer with registered inputs and outputs referenced to the rising edge of CLK.

This device targets designs that require a compact 128 Mbit parallel SDRAM solution with programmable burst and latency options and an industrial operating temperature range (‑40°C to 85°C).

Key Features

• Memory Capacity & Organization — 128 Mbit capacity organized as 8M × 16 (quad‑bank internal architecture).
• Synchronous SDRAM Core — Fully synchronous operation with all signals referenced to the positive clock edge; pipeline architecture for high‑speed transfers.
• Speed Grade (‑7) — Clock frequency up to 143 MHz and typical access time from clock of 5.4 ns (CAS latency = 3).
• Programmable Timing & Burst — Programmable CAS latency (2 or 3 clocks), programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave).
• Refresh & Power Modes — Auto Refresh and Self Refresh support with 4096 refresh cycles every 64 ms; power‑down mode available for power savings.
• Interface & Signaling — LVTTL interface with random column address every clock cycle and burst read/write capability.
• Voltage Supply — Designed for a 3.0 V to 3.6 V supply range; VDD and VDDQ specified at 3.3 V in device documentation.
• Package & Mounting — 54‑ball TF‑BGA (8×8) package suitable for compact board layouts; mounting type: volatile DRAM.
• Industrial Temperature Range — Operating temperature from ‑40°C to 85°C (TA), supporting industrial deployments.

Typical Applications

• Embedded and Industrial Systems — Use where a 128 Mbit parallel SDRAM with an industrial temperature range (‑40°C to 85°C) and 3.0–3.6 V supply is required.
• High‑Speed Buffering — Systems requiring synchronous pipeline transfers and burst read/write operations at up to 143 MHz clock rates.
• Memory Expansion for Parallel Interfaces — Designs that need a compact TF‑BGA packaged parallel SDRAM for board space‑constrained applications.

Unique Advantages

• Configurable Performance: Programmable CAS latency (2 or 3) and multiple burst length/sequence options let designers tune latency and throughput to match system timing.
• Quad‑Bank Architecture: Internal bank structure enables overlapping row access and precharge to improve effective data throughput in burst operations.
• Industrial Temperature Capability: Rated for operation from ‑40°C to 85°C, making the device suitable for deployments with extended temperature demands.
• Synchronous LVTTL Interface: Registered inputs/outputs referenced to CLK provide predictable timing for high‑speed parallel designs.
• Compact TF‑BGA Packaging: 54‑ball TF‑BGA (8×8) package supports compact PCB layouts while delivering parallel SDRAM capacity.

Why Choose IC DRAM 128MBIT PAR 54TFBGA?

The IS42S16800E-7BLI-TR combines a 128 Mbit synchronous DRAM core with configurable timing and burst modes, a quad‑bank pipeline architecture, and industrial temperature rating to meet the needs of compact, high‑speed parallel memory designs. Its 54‑ball TF‑BGA packaging and LVTTL synchronous interface make it a practical choice for space‑constrained embedded and industrial systems that require predictable timing and refresh management.

Designers seeking a 3.0–3.6 V parallel SDRAM with programmable latency, auto/self‑refresh capabilities, and support for up to 143 MHz clock operation will find this device appropriate for applications that balance density, timing flexibility, and industrial temperature operation.

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