IS42S16800F-6B-TR

The IS42S16800F-6B-TR from Integrated Silicon Solution Inc is a volatile SDRAM device offering 128 Mbit of parallel memory in an 8M × 16 organization. It is provided in a 54-TFBGA (8×8) package and is specified for operation at a 166 MHz clock with a 5.4 ns access time.

This SDRAM is intended for designs that require a compact, parallel DRAM solution operating from 3.0 V to 3.6 V and within an ambient temperature range of 0°C to 70°C.

Key Features

• Memory Type & Format  Volatile SDRAM organized as 8M × 16, delivering a total memory size of 128 Mbit.
• Interface  Parallel memory interface for standard DRAM access patterns.
• Performance  Specified clock frequency of 166 MHz with an access time of 5.4 ns to support high-speed read/write cycles.
• Voltage Supply  Operates from 3.0 V to 3.6 V, matching common 3V system rails.
• Package  54-TFBGA (8×8) package case providing a compact board footprint for high-density memory.
• Operating Temperature  Rated for ambient operation from 0°C to 70°C (TA).

Unique Advantages

• Parallel throughput: 166 MHz clock and parallel interface enable efficient data transfer for designs that require fast volatile storage.
• Deterministic timing: 5.4 ns access time gives predictable memory latency for time-sensitive applications.
• Compact package: 54-TFBGA (8×8) reduces PCB area while maintaining 128 Mbit density.
• Standard supply range: 3.0 V–3.6 V compatibility simplifies integration with typical 3V system power domains.
• Clear memory organization: 8M × 16 layout supports straightforward address and data mapping for parallel DRAM designs.

Why Choose IS42S16800F-6B-TR?

The IS42S16800F-6B-TR positions itself as a compact, high-speed parallel SDRAM option from Integrated Silicon Solution Inc, combining a 128 Mbit density with a 54-TFBGA package and defined timing characteristics. Its specified clock rate, access time, voltage range, and operating temperature make it suitable for systems that require a reliable parallel DRAM component with predictable performance.

Engineers specifying this device will benefit from clear electrical and mechanical parameters—memory organization (8M × 16), supply voltage (3.0 V–3.6 V), clock frequency (166 MHz), and ambient temperature rating (0°C–70°C)—to assess fit for their designs and long-term deployment considerations.

If you would like pricing, lead-time information, or to request a quote for the IS42S16800F-6B-TR, please request a quote or contact sales to discuss availability and ordering details.