 | | IS42S16160J-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 839 | |
 | | IS42S16160J-7TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,029 | |
 | | IS42S16160J-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,226 | |
 | | IS42S16160L-5BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,890 | |
 | | IS42S16160L-6BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 344 | |
 | | IS42S16160L-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 779 | |
 | | IS42S16160L-6BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,442 | |
 | | IS42S16160L-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 45 | |
 | | IS42S16160L-6TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,397 | |
 | | IS42S16160L-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,112 | |
 | | IS42S16160L-6TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 784 | |
 | | IS42S16160L-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 455 | |
 | | IS42S16160L-7BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 953 | |
 | | IS42S16160L-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 816 | |
 | | IS42S16160L-7BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,537 | |
 | | IS42S16160L-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,132 | |
 | | IS42S16160L-7TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 371 | |
 | | IS42S16160L-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 90 | |
 | | IS42S16160L-7TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,273 | |
 | | IS42S16160L-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 250 | |