 | | IS42S32160C-75BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,492 | |
 | | IS42S32160C-75BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,238 | |
 | | IS42S32160D-6BI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,311 | |
 | | IS42S32160D-6BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 516 | |
 | | IS42S32160D-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,328 | |
 | | IS42S32160D-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 117 | |
 | | IS42S32160D-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 991 | |
 | | IS42S32160D-7BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,070 | |
 | | IS42S32160D-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,583 | |
 | | IS42S32160D-7BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 590 | |
 | | IS42S32160D-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 131 | |
 | | IS42S32160F-6BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 159 | |
 | | IS42S32160F-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 409 | |
 | | IS42S32160F-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 395 | |
 | | IS42S32160F-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 363 | |
 | | IS42S32160F-6TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,532 | |
 | | IS42S32160F-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 982 | |
 | | IS42S32160F-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 185 | |
 | | IS42S32160F-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,081 | |
 | | IS42S32160F-75EBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 973 | |