IS42S32160D-6BL-TR

The IS42S32160D-6BL-TR is a 512 Mbit synchronous DRAM device from Integrated Silicon Solution, Inc. It is organized as 16M x 32 with a parallel SDRAM interface and is implemented using a pipelined, fully synchronous architecture where all signals are referenced to the positive clock edge.

Designed for commercial-temperature systems (0°C to 70°C), this device targets applications requiring high-speed burst transfers and predictable timing: it supports a clock frequency around 166 MHz with an access time of 5.4 ns and ships in a compact 90-TFBGA (8×13) package.

Key Features

• Core & Architecture  Fully synchronous SDRAM with pipeline architecture; all inputs and outputs reference the rising clock edge and internal banks are used to hide row access/precharge.
• Memory Organization  512 Mbit capacity organized as 16M × 32 with four internal banks for concurrent row operations.
• Performance  Rated for operation at approximately 166 MHz with an access time of 5.4 ns; programmable CAS latency options (2 or 3 clocks) and support for programmable burst lengths.
• Refresh & Reliability  Supports Auto Refresh and Self Refresh modes with 8K refresh cycles every 64 ms to maintain data integrity in standby states.
• Interface & Control  Parallel memory interface with LVTTL signaling and support for programmable burst sequence (sequential/interleave) and burst termination commands.
• Power  Supply voltage range specified at 3.0 V to 3.6 V for VDD/VDDQ variants applicable to this device family.
• Package & Temperature  Available in a 90-ball thin fine-pitch BGA (90-TFBGA, 8×13) and specified for commercial temperature operation from 0°C to 70°C.

Typical Applications

• Embedded memory subsystems  Acts as a 512 Mbit parallel SDRAM for systems requiring wide data paths and high-rate burst transfers.
• High-speed buffering  Suitable for designs that use burst read/write operations and need predictable CAS latency and refresh behavior.
• Consumer electronic modules  Fits commercial-temperature consumer devices where a compact 90-TFBGA memory package and 3.0–3.6 V supply are required.

Unique Advantages

• Wide, practical data path: The 16M × 32 organization provides a x32 interface for wide-data parallel transfers, simplifying bus timing and reducing transfer cycles.
• Programmable timing and bursts: CAS latency options and programmable burst length/sequence let designers tune latency versus throughput for target workloads.
• Built-in refresh management: Auto Refresh and Self Refresh with defined 8K/64 ms cycles reduce software overhead for data retention during low-power or idle periods.
• Compact BGA footprint: 90-TFBGA (8×13) packaging offers a small PCB area for high-density designs while providing the necessary ball count for x32 operation.
• Commercial temperature rating: Specified operation from 0°C to 70°C for deployment in standard commercial environments.
• Clear electrical range: Documented supply voltage range of 3.0 V to 3.6 V supports common 3.3 V system rails.

Why Choose IS42S32160D-6BL-TR – IC DRAM 512MBIT PAR 90TFBGA?

The IS42S32160D-6BL-TR delivers a 512 Mbit, fully synchronous SDRAM solution with a x32 organization and pipeline architecture suited to systems that require predictable, high-rate burst transfers. With programmable CAS latency, flexible burst controls, and integrated refresh modes, it provides designers with timing and power handling options to match specific performance and retention needs.

Presented in a 90-TFBGA package and specified for commercial temperature operation, this device is appropriate for compact, 3.0–3.6 V systems where a wide parallel memory interface and documented timing (≈166 MHz clock, 5.4 ns access) are required. Complete device and package specifications are provided in the manufacturer’s datasheet for design and validation.

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