IS42S32160D-7BL-TR

The IS42S32160D-7BL-TR is a 512 Mbit synchronous DRAM organized as 16M × 32, supplied in a 90-ball TF-BGA (8×13) package. It implements a fully synchronous, pipelined architecture with a parallel memory interface and is specified for operation at up to 143 MHz with a 3.0 V–3.6 V supply range.

This device targets designs that require on-board parallel SDRAM with programmable burst control, selectable CAS latency, and standard refresh modes for reliable volatile storage within a commercial temperature range of 0 °C to 70 °C.

Key Features

• Memory Core  512 Mbit SDRAM organized as 16M × 32 with internal banks for row access/precharge management.
• Clock and Timing  Rated for 143 MHz operation (part -7); access time from clock specified at 5.4 ns with programmable CAS latency options (2 or 3 clocks).
• Burst and Access Modes  Programmable burst lengths (1, 2, 4, 8, full page) and selectable sequential or interleave burst sequences; supports burst read/write and burst termination commands.
• Refresh and Power Management  Supports Auto Refresh and Self Refresh with 8K refresh cycles every 64 ms; VDD / VDDQ supply range specified at 3.0 V to 3.6 V for this device.
• Interface  Parallel memory interface with LVTTL-compatible signaling and random column address capability every clock cycle.
• Package and Temperature  90-TFBGA (8×13) ball package for board-level mounting; commercial ambient operating temperature 0 °C to 70 °C (TA).

Typical Applications

• System memory/buffering  On-board DRAM for temporary storage and data buffering in systems that require a 512 Mbit synchronous parallel memory.
• Burst-oriented data streaming  Designs that use programmed burst lengths and CAS latency settings for predictable read/write transactions benefit from the device's burst controls.
• Compact board-level memory  Use where a 90-ball TF-BGA package and a 3.0 V–3.6 V supply fit board-layout and power constraints for commercial-temperature applications.

Unique Advantages

• Configurable latency and burst behavior: Programmable CAS latency (2 or 3) and multiple burst-length options let designers tune throughput and latency trade-offs.
• Synchronous, pipelined architecture: Fully synchronous operation with internal bank management supports continuous, clock-referenced data transfers.
• Standard refresh support: Auto Refresh and Self Refresh modes with 8K refresh cycles per 64 ms simplify retention management for volatile storage.
• Wide supply tolerance: Operates across a 3.0 V–3.6 V VDD/VDDQ range to accommodate common 3.3 V system rails.
• Compact BGA package: 90-TFBGA (8×13) ball footprint provides a dense board-level memory option for space-constrained designs.

Why Choose IC DRAM 512Mbit PAR 90TFBGA?

The IS42S32160D-7BL-TR delivers a straightforward, standards-based 512 Mbit SDRAM solution for designs requiring a parallel synchronous memory with programmable burst behavior and selectable CAS latency. Its 16M × 32 organization, internal bank architecture, and support for Auto/Self Refresh make it suitable for applications needing predictable, clock-referenced volatile storage within a commercial temperature range.

This device is well suited to engineers and system designers who need a board-mounted DRAM in a compact 90-TFBGA package, operating at 143 MHz with a 3.0 V–3.6 V supply. Its combination of timing options, burst programmability, and refresh features provides flexibility for a range of memory buffering and temporary storage roles.

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