IS42S32160F-6BL-TR

IC DRAM 512MBIT PAR 90TFBGA
Part Description

IC DRAM 512MBIT PAR 90TFBGA

Quantity 228 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S32160F-6BL-TR – IC DRAM 512MBIT PAR 90TFBGA

The IS42S32160F-6BL-TR from ISSI is a 512 Mbit volatile SDRAM organized as 16M × 32 with a parallel memory interface. It is supplied in a 90-TFBGA (8×13) package and is designed for use where a compact, parallel DRAM component is required.

Key electrical and timing characteristics include a 167 MHz clock frequency, a 5.4 ns access time, and a supply voltage range of 3.0 V to 3.6 V. The device is specified for an ambient operating temperature range of 0°C to 70°C.

Key Features

  • Memory Core 512 Mbit SDRAM organized as 16M × 32, implemented as volatile DRAM for standard read/write storage.
  • Interface Parallel memory interface suitable for systems that support parallel SDRAM connectivity.
  • Performance Operates with a 167 MHz clock frequency and an access time of 5.4 ns to support moderate-latency memory operations.
  • Power Supply voltage range of 3.0 V to 3.6 V, compatible with common 3.3 V memory power domains.
  • Package 90-TFBGA package (8×13) provides a compact BGA footprint for space-constrained board designs.
  • Operating Temperature Rated for ambient temperatures from 0°C to 70°C (TA), suitable for commercial temperature applications.
  • Manufacturer Produced by Integrated Silicon Solution Inc (ISSI), listed under part number IS42S32160F-6BL-TR.

Typical Applications

  • Embedded systems — For designs requiring a 512 Mbit parallel SDRAM (16M × 32) with a 167 MHz clock and standard 3.0–3.6 V supply.
  • Consumer electronics — Use where a compact 90-TFBGA memory package and commercial temperature range (0°C–70°C) meet system requirements.
  • Memory subsystems — As a parallel DRAM component for buffering or external memory expansion in systems that accept parallel SDRAM.

Unique Advantages

  • High-density memory in a compact package: 512 Mbit capacity delivered in a 90-TFBGA (8×13) footprint to save PCB area.
  • Clear performance specification: 167 MHz clock and 5.4 ns access time provide verifiable timing characteristics for system design and verification.
  • Standard power domain compatibility: 3.0 V to 3.6 V supply range aligns with common 3.3 V system rails to simplify power design.
  • Commercial temperature rating: 0°C to 70°C operating range suited to many end-equipment environments.
  • Known manufacturer: Device manufactured by ISSI (Integrated Silicon Solution Inc), identified by part number IS42S32160F-6BL-TR.

Why Choose IS42S32160F-6BL-TR?

The IS42S32160F-6BL-TR combines a 512 Mbit SDRAM architecture (16M × 32) with defined timing and voltage requirements to simplify integration into systems that require parallel DRAM. Its 167 MHz clock capability, 5.4 ns access time, and 90-TFBGA package make it a straightforward option for designers targeting compact boards and commercial-temperature applications.

This device is suitable for engineers and procurement teams seeking a verifiable, mid-density parallel SDRAM component from ISSI for memory expansion, buffering, or other external DRAM needs where the specified electrical and thermal conditions match the system design.

Request a quote or contact sales to discuss availability, lead times, and pricing for the IS42S32160F-6BL-TR.

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