IS42S32160F-6BLI
| Part Description |
IC DRAM 512MBIT PAR 90TFBGA |
|---|---|
| Quantity | 638 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 6 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S32160F-6BLI - 512Mbit Synchronous DRAM in 90-TFBGA
The IS42S32160F-6BLI is a 512Mbit synchronous DRAM designed for embedded systems requiring high-speed volatile memory with extended temperature operation. Built with a 16M x 32 memory organization, this parallel interface SDRAM operates at up to 167MHz clock frequency, making it suitable for industrial, automotive, and communications applications where reliable memory performance is critical across temperature extremes from -40°C to 85°C.
This DRAM provides fast 5.4ns access time in a compact 90-TFBGA package (8x13mm), enabling designers to meet performance requirements while maintaining tight PCB space constraints in embedded designs.
Key Features
- Memory Architecture - 512Mbit capacity organized as 16M x 32, providing efficient 32-bit wide data paths for high-throughput applications
- High-Speed Operation - 167MHz clock frequency with 5.4ns access time supports demanding real-time processing and data buffering requirements
- Extended Temperature Range - Operates reliably from -40°C to 85°C, making it suitable for industrial and automotive environments with challenging thermal conditions
- Power Supply - Standard 3V to 3.6V operating voltage simplifies integration into common embedded system power architectures
- Compact Package - 90-pin TFBGA in 8x13mm footprint maximizes board space efficiency for dense designs
- Parallel Interface - Direct parallel memory interface eliminates protocol overhead for deterministic, low-latency memory access
Typical Applications
- Industrial Control Systems - This SDRAM provides reliable program execution and data storage for PLCs, motion controllers, and industrial PCs where the extended temperature range ensures consistent operation in factory floor environments without additional thermal management.
- Automotive Infotainment and Telematics - The wide operating temperature tolerance and fast access times support real-time multimedia processing and navigation systems in vehicles, handling temperature extremes from cold starts to hot cabin conditions.
- Networking and Communications Equipment - High-speed parallel access enables efficient packet buffering and protocol processing in routers, switches, and telecommunications infrastructure operating in temperature-controlled or outdoor enclosures.
- Test and Measurement Instruments - Fast memory access supports high-speed data acquisition systems, oscilloscopes, and analyzers that require rapid storage of measurement data with reliable performance across varying environmental conditions.
- Medical Devices - The combination of extended temperature operation and reliable synchronous operation makes this SDRAM suitable for portable and bedside medical equipment requiring dependable memory performance in clinical environments.
Unique Advantages
- Wide Temperature Operation Without Derating: The -40°C to 85°C specification eliminates the need for thermal management solutions in many industrial applications, reducing system complexity and cost.
- Efficient 32-bit Data Path: The 16M x 32 organization provides wide data access that reduces memory transaction overhead compared to narrower x8 or x16 configurations, improving system throughput.
- Fast Access for Real-Time Response: The 5.4ns access time ensures deterministic memory performance for time-critical embedded applications where predictable latency is essential.
- Space-Efficient Design: The compact 90-TFBGA package delivers high memory density in a small footprint, enabling more compact product designs or additional functionality in the same board area.
- Standard Voltage Operation: The 3V to 3.6V supply voltage range aligns with common embedded system power rails, simplifying power distribution and reducing the need for additional voltage regulators.
- Parallel Interface Simplicity: Direct memory mapping without serial protocols reduces design complexity and firmware overhead while providing deterministic access patterns for real-time operating systems.
Why Choose IS42S32160F-6BLI?
The IS42S32160F-6BLI addresses the needs of embedded system designers who require reliable, high-speed volatile memory that can withstand industrial and automotive temperature extremes. With its combination of 512Mbit capacity, fast access times, and wide operating temperature range, this SDRAM is particularly well-suited for control systems, automotive applications, and industrial equipment where memory must perform consistently across challenging environmental conditions.
For designs where board space is at a premium and extended temperature operation is mandatory, the IS42S32160F-6BLI delivers proven SDRAM technology in a compact package that reduces both component count and thermal management requirements, ultimately lowering total system cost while maintaining performance and reliability.
Get Started with IS42S32160F-6BLI
Contact our technical sales team to discuss how the IS42S32160F-6BLI can meet your embedded memory requirements. We can provide detailed specifications, reference designs, and volume pricing to support your development timeline and production needs.