IS42S32160D-7BLI-TR

The IS42S32160D-7BLI-TR is a 512 Mbit synchronous DRAM (SDRAM) from Integrated Silicon Solution Inc., organized as 16M × 32 and delivered in a 90‑TFBGA (8×13) package. The device uses a pipeline architecture with fully synchronous operation; all input and output signals are referenced to the rising edge of the clock.

Targeted at designs requiring parallel SDRAM capacity, this -7 speed grade supports a clock frequency of 143 MHz with access times down to 5.4 ns, programmable burst and CAS latency options, and built-in refresh/self-refresh features to maintain data integrity within its specified voltage and temperature ranges.

Key Features

• Core / Architecture  Fully synchronous SDRAM with pipeline architecture; all signals referenced to a positive clock edge to support predictable timing.
• Memory Organization & Capacity  512 Mbit total capacity organized as 16M × 32.
• Internal Bank Structure  Internal bank architecture for hiding row access and precharge operations, improving effective throughput.
• Performance / Timing  -7 speed grade supports 143 MHz clock frequency and access time from clock of 5.4 ns; programmable CAS latency (2 or 3 clocks).
• Burst Control & Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); supports burst read/write and burst read/single write operations with burst termination options.
• Refresh & Power Management  Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles every 64 ms as specified.
• Interface & Voltage  Parallel memory interface with LVTTL signaling and supply voltage range of 3V ~ 3.6V.
• Package & Temperature Range  Supplied in a 90‑TFBGA (8×13) package; operating temperature range −40°C to +85°C (TA).

Unique Advantages

• High-density parallel memory: 512 Mbit capacity in a 16M × 32 organization provides substantial on-board SDRAM for systems requiring parallel memory access.
• Predictable synchronous timing: Fully synchronous, clock-referenced I/O and pipeline architecture enable deterministic access timing consistent with the published 143 MHz / 5.4 ns specifications.
• Flexible data transfer control: Programmable burst lengths and burst sequencing plus CAS latency options let designers tune transfer patterns to match system requirements.
• Built-in refresh support: Auto and self-refresh plus specified 8K/64 ms refresh cycles maintain data integrity without external management logic.
• Compact BGA footprint: 90‑TFBGA (8×13) package minimizes PCB area while providing the required I/O count for a 32-bit data width.
• Industrial temperature support: Specified operation from −40°C to +85°C (TA) for use in temperature-critical environments within the stated limit.

Why Choose IS42S32160D-7BLI-TR?

The IS42S32160D-7BLI-TR combines 512 Mbit SDRAM capacity with synchronous pipeline architecture and programmable timing controls, delivering a predictable parallel memory solution in a compact 90‑TFBGA package. Its -7 timing grade, built-in refresh modes, and LVTTL interface provide the functional building blocks required for systems that need managed SDRAM operation within a 3V–3.6V supply envelope.

This device is appropriate for designs that require a verified SDRAM feature set—programmable burst/CAS options, internal bank management, and self-refresh—backed by Integrated Silicon Solution Inc.'s product specification details.

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