IS42S32160F-6BL
| Part Description |
IC DRAM 512MBIT PAR 90TFBGA |
|---|---|
| Quantity | 713 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S32160F-6BL – IC DRAM 512MBIT PAR 90TFBGA
The IS42S32160F-6BL is a 512 Mbit SDRAM organized as 16M × 32 with a parallel memory interface, supplied in a 90‑TFBGA (8×13) package. It is a volatile DRAM device designed for systems requiring mid-density parallel SDRAM memory.
This device operates with a clock frequency of 167 MHz, an access time of 5.4 ns, and supports a supply voltage range of 3.0 V to 3.6 V. The specified operating ambient temperature range is 0°C to 70°C.
Key Features
- Memory Architecture 512 Mbit capacity organized as 16M × 32 providing standard DRAM organization for parallel memory systems.
- Technology & Format SDRAM volatile memory format suitable for parallel SDRAM designs.
- Performance Operates at a 167 MHz clock frequency with a 5.4 ns access time for predictable timing characteristics.
- Interface Parallel memory interface compatible with conventional parallel SDRAM implementations.
- Voltage Supply Supports a supply voltage range of 3.0 V to 3.6 V.
- Package Delivered in a 90‑TFBGA package case, 8×13 ball array, for a compact PCB footprint.
- Operating Temperature Specified for operation from 0°C to 70°C (TA).
Unique Advantages
- Mid‑density 512 Mbit capacity: Provides a balance of capacity and board area for systems that require moderate DRAM storage.
- Measured performance: 167 MHz clock and 5.4 ns access time give defined timing for system design and memory subsystem planning.
- Standard parallel interface: Simplifies integration into existing parallel SDRAM architectures without requiring serial interface adaptation.
- Wide supply compatibility: 3.0 V–3.6 V range fits common 3.3 V-class power rails.
- Compact TFBGA package (8×13): 90‑TFBGA packaging minimizes PCB area while providing BGA mounting.
- Manufactured by ISSI: Provided by Integrated Silicon Solution Inc., the device is sourced from an established memory supplier.
Why Choose IS42S32160F-6BL?
The IS42S32160F-6BL delivers a compact, mid-density SDRAM solution with defined performance parameters—167 MHz clocking and 5.4 ns access time—suitable for designs that require a parallel DRAM interface and predictable timing. Its 3.0 V–3.6 V supply range and 90‑TFBGA (8×13) package support integration into space-constrained printed circuit boards.
This device is appropriate for engineering teams specifying a 512 Mbit parallel SDRAM from Integrated Silicon Solution Inc. where clear electrical and timing specifications, standard parallel interfacing, and a compact package are key selection criteria.
Request a quote or contact sales to discuss availability, lead times, and pricing for the IS42S32160F-6BL.
