IS42S32160F-6TL
| Part Description |
IC DRAM 512MBIT PAR 86TSOP II |
|---|---|
| Quantity | 124 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S32160F-6TL – IC DRAM 512MBIT PAR 86TSOP II
The IS42S32160F-6TL is a 512 Mbit volatile SDRAM device organized as 16M × 32, delivered in an 86‑TSOP II package. It implements a parallel DRAM interface and is offered by Integrated Silicon Solution Inc (ISSI).
This component is specified with a 167 MHz clock frequency, 5.4 ns access time, and operates from 3.0 V to 3.6 V within a commercial temperature range of 0°C to 70°C (TA), providing compact high‑density memory in a 86‑TFSOP (0.400", 10.16 mm width) footprint.
Key Features
- Memory Type and Format Volatile DRAM configured as 16M × 32, providing a total memory size of 512 Mbit.
- Performance Rated clock frequency of 167 MHz and an access time of 5.4 ns for timing-sensitive applications requiring parallel SDRAM operation.
- Interface Parallel memory interface suitable for systems designed to integrate standard DRAM signaling and control.
- Supply Voltage Operates from 3.0 V to 3.6 V, accommodating 3 V nominal system rails.
- Package 86‑TSOP II (86‑TFSOP) package with 0.400" (10.16 mm) width for compact board-level integration.
- Operating Range Commercial ambient temperature rating of 0°C to 70°C (TA).
- Manufacturer Supplied by Integrated Silicon Solution Inc (ISSI).
Unique Advantages
- High memory density: 512 Mbit capacity in a single device reduces component count where mid-density DRAM is required.
- Parallel SDRAM performance: 167 MHz clock rating and 5.4 ns access time enable responsive parallel memory access consistent with the device specification.
- Standard 3 V supply: Compatibility with 3.0 V to 3.6 V systems simplifies power supply requirements.
- Compact TSOP II packaging: 86‑TSOP II footprint (10.16 mm width) supports space-constrained board designs.
- Clear operating limits: Specified commercial temperature range (0°C to 70°C) for predictable thermal behavior within defined conditions.
Why Choose IC DRAM 512MBIT PAR 86TSOP II?
The IS42S32160F-6TL combines a mid-range 512 Mbit SDRAM capacity with a parallel interface and compact 86‑TSOP II packaging, delivering predictable timing characteristics (167 MHz clock, 5.4 ns access) for designs that require defined DRAM performance and a 3 V supply domain. Its specification set is focused and suitable for engineers specifying a commercial-temperature, parallel DRAM device from ISSI.
This part is appropriate for designs that need a verified 16M × 32 DRAM building block with clear electrical and timing parameters, offering straightforward integration into systems that accept an 86‑TSOP II package and 3.0 V nominal operation.
If you would like pricing or availability information for IS42S32160F-6TL, request a quote or submit an inquiry to obtain current lead times and ordering details.
