IS42S32160F-6TLI-TR

IC DRAM 512MBIT PAR 86TSOP II
Part Description

IC DRAM 512MBIT PAR 86TSOP II

Quantity 1,164 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S32160F-6TLI-TR – IC DRAM 512MBIT PAR 86TSOP II

The IS42S32160F-6TLI-TR is a 512 Mbit volatile SDRAM organized as 16M × 32 with a parallel memory interface. It delivers high-frequency parallel memory operation with a clock rating of 167 MHz and a typical access time of 5.4 ns, packaged in an 86-TSOP II footprint.

Designed for systems requiring a compact, parallel SDRAM device, the IS42S32160F-6TLI-TR combines a 32-bit data path and standard 3.0–3.6 V supply range with industrial-grade operating temperature support from −40°C to 85°C.

Key Features

  • Memory Architecture 512 Mbit SDRAM organized as 16M × 32, providing a 32-bit parallel data path for wide-bandwidth memory access.
  • Performance Clock frequency rated to 167 MHz with an access time of 5.4 ns for responsive read/write cycles.
  • Interface Parallel memory interface suitable for designs requiring conventional SDRAM command and control signaling.
  • Power Operates from a 3.0 V to 3.6 V supply range, accommodating standard 3.3 V system rails.
  • Package Supplied in an 86-TSOP II (86-TFSOP) package with a 0.400" (10.16 mm) body width for compact board-level integration.
  • Operating Temperature Extended ambient range from −40°C to 85°C (TA) for deployment in temperature-demanding environments.

Typical Applications

  • Parallel memory subsystems — Acts as a 512 Mbit parallel SDRAM element where a 32-bit data bus and conventional SDRAM timing are required.
  • High-frequency memory interfaces — Suitable for designs targeting up to 167 MHz clock operation that need deterministic access timing.
  • Industrial temperature environments — Use in systems that require operation across −40°C to 85°C ambient conditions.

Unique Advantages

  • Wide 32-bit bus width: 16M × 32 organization provides a broad data path for higher throughput in parallel memory architectures.
  • Specified timing performance: 167 MHz clock rating and 5.4 ns access time support responsive memory transactions and predictable latency.
  • Standard 3.3 V compatibility: 3.0–3.6 V supply range aligns with common system rails, simplifying power-domain integration.
  • Compact TSOP II package: 86-TSOP II (10.16 mm width) reduces board footprint while maintaining accessible pinout for parallel SDRAM layouts.
  • Extended operating range: −40°C to 85°C ambient rating enables use in temperature-challenging applications.

Why Choose IS42S32160F-6TLI-TR?

The IS42S32160F-6TLI-TR provides a straightforward, high-frequency parallel SDRAM solution for designs that require a 512 Mbit volatile memory with a 32-bit data bus. Its combination of 167 MHz clock capability, 5.4 ns access time, and standard 3.0–3.6 V operation make it suitable for systems where predictable timing and 32-bit throughput are important.

Packaged in an 86-TSOP II form factor and rated for −40°C to 85°C, this device is appropriate for compact board-level integration in environments with extended temperature requirements. Manufactured by ISSI (Integrated Silicon Solution Inc.), it is a focused option for engineers specifying parallel SDRAM density, timing, and package constraints.

Request a quote or submit a pricing inquiry to obtain availability and lead-time information for the IS42S32160F-6TLI-TR.

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