IS42S32160F-75EBLI-TR

The IS42S32160F-75EBLI-TR from ISSI (Integrated Silicon Solution Inc) is a 512 Mbit volatile SDRAM device organized as 16M × 32 and provided in a 90-TFBGA (8×13) package. It implements a parallel memory interface and operates from a 3.0 V to 3.6 V supply.

With a 133 MHz clock frequency and a 6 ns access time, this SDRAM supports designs that require mid-frequency parallel DRAM performance and operation across a wide temperature range of −40 °C to 85 °C.

Key Features

• Memory Core 512 Mbit SDRAM organized as 16M × 32 for straightforward data width and addressing implementation.
• Technology SDRAM architecture providing synchronous parallel access for deterministic timing and bus control.
• Performance 133 MHz clock frequency with a 6 ns access time to support mid-frequency memory operations.
• Voltage and Power Operates from 3.0 V to 3.6 V, covering standard 3.3 V system supplies.
• Package 90-TFBGA package (8×13) for compact board-level integration and solder-mount assembly.
• Operating Temperature Specified for −40 °C to 85 °C ambient (TA), suitable for a broad range of thermal environments.
• Interface Parallel memory interface for use in designs requiring parallel DRAM connectivity.

Typical Applications

• System Memory Expansion — Provides 512 Mbit of parallel SDRAM for designs that require additional volatile memory capacity and buffering.
• Frame and Data Buffering — Used where parallel SDRAM is needed for temporary storage and high-throughput buffering tasks.
• Board-Level Memory Subsystems — Suitable for inclusion on PCBs as the primary or auxiliary parallel DRAM component within a memory subsystem.

Unique Advantages

• 512 Mbit Density: High-density memory organization (16M × 32) reduces the number of devices required to achieve larger memory capacities.
• Synchronous Parallel Interface: SDRAM architecture with parallel interface provides predictable timing for system memory controllers.
• Mid-Frequency Performance: 133 MHz clock and 6 ns access time offer a balance of speed and system compatibility for mid-range applications.
• Broad Voltage Range: 3.0 V to 3.6 V support simplifies integration into standard 3.3 V power rails.
• Extended Temperature Range: Rated for −40 °C to 85 °C ambient to accommodate a wide set of operating environments.
• Compact TFBGA Package: 90-TFBGA (8×13) package enables compact board layouts and scalable assembly.

Why Choose IC DRAM 512MBIT PAR 90TFBGA?

The IC DRAM 512MBIT PAR 90TFBGA (IS42S32160F-75EBLI-TR) positions itself as a practical choice for designs requiring a 512 Mbit parallel SDRAM with defined timing, voltage, and temperature characteristics. Its 16M × 32 organization, 133 MHz clock capability, and 6 ns access time make it suitable for systems that need deterministic parallel memory performance.

Engineers and procurement teams will find value in the device’s combination of density, standard 3.3 V compatibility, and a compact 90-TFBGA package, supporting robust board-level integration and consistent thermal performance across −40 °C to 85 °C.

Request a quote or submit a product inquiry to receive pricing, lead time, and availability information for the IS42S32160F-75EBLI-TR.