IS42S32160F-75ETL
| Part Description |
IC DRAM 512MBIT PAR 86TSOP II |
|---|---|
| Quantity | 987 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 6 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S32160F-75ETL – 512 Mbit SDRAM, 86‑TSOP II
The IS42S32160F-75ETL is a 512 Mbit volatile SDRAM organized as 16M × 32 with a parallel memory interface. It delivers synchronous DRAM performance with a maximum clock frequency of 133 MHz and a typical access time of 6 ns.
Designed for systems that require mid-density parallel SDRAM, the device operates from a 3.0 V to 3.6 V supply and is supplied in an 86‑TSOP II (10.16 mm width) package with an operating temperature range of 0 °C to 70 °C.
Key Features
- Memory Core 512 Mbit DRAM organized as 16M × 32, suitable for parallel SDRAM memory architectures.
- Technology & Performance SDRAM technology with a clock frequency up to 133 MHz and an access time of 6 ns for predictable synchronous operation.
- Interface Parallel memory interface for integration into existing parallel memory buses and controller designs.
- Power Operates from a 3.0 V to 3.6 V supply range, enabling compatibility with standard 3 V system rails.
- Package Supplied in an 86‑TSOP II (86‑TFSOP, 0.400", 10.16 mm width) package for compact PC board footprint.
- Operating Range Rated for ambient operation from 0 °C to 70 °C (TA).
Typical Applications
- Parallel memory subsystems — Acts as 512 Mbit synchronous DRAM in designs that require a 16M × 32 organization and parallel interface.
- System buffering and working memory — Provides working storage for data buffering and temporary storage in systems with 133 MHz clock requirements.
- PCB designs with compact package needs — The 86‑TSOP II package supports space-constrained board layouts while providing a parallel DRAM interface.
Unique Advantages
- High-density 512 Mbit capacity: Offers substantial storage in a single-device footprint to reduce component count.
- Synchronous operation at 133 MHz: Enables deterministic timing with a 6 ns access time for designs requiring predictable memory performance.
- Standard 3.0–3.6 V supply: Matches common 3 V system power rails for straightforward integration.
- Parallel interface: Compatible with parallel SDRAM controller architectures, simplifying interface implementation in legacy and contemporary designs.
- Compact 86‑TSOP II package: Provides a small footprint solution for board designs with limited space.
Why Choose IC DRAM 512MBIT PAR 86TSOP II?
The IS42S32160F-75ETL combines a 512 Mbit SDRAM core with synchronous operation and a parallel interface to deliver reliable mid-density memory for designs that require 16M × 32 organization and up to 133 MHz clocking. Its 3.0–3.6 V supply range and 86‑TSOP II package enable integration into compact systems with standard 3 V rails.
Backed by Integrated Silicon Solution Inc (ISSI), this device is suited for engineers and procurement teams seeking a clear specification set for parallel SDRAM implementations where capacity, synchronous timing, and package density are primary selection criteria.
Request a quote or submit a pricing inquiry to check availability and lead times for the IS42S32160F-75ETL.
