IS42S32160F-75ETLI-TR

The IS42S32160F-75ETLI-TR is a 512 Mbit volatile SDRAM organized as 16M × 32 with a parallel memory interface. It operates up to a 133 MHz clock with a 6 ns access time, supplied from a 3.0 V to 3.6 V rail and packaged in an 86‑TSOP II (10.16 mm width) footprint.

This device is intended for designs that require parallel SDRAM memory with defined timing and operating ranges, including support for operation from -40 °C to 85 °C ambient temperature.

Key Features

• Memory Core 512 Mbit SDRAM organized as 16M × 32, providing a single-chip parallel memory solution for systems requiring this density and organization.
• Performance Supports a clock frequency of 133 MHz with a typical access time of 6 ns, enabling predictable read/write timing for memory controllers designed to this specification.
• Interface Parallel memory interface suitable for controllers and designs that use parallel DRAM signaling and timing conventions.
• Power Operates from a supply voltage range of 3.0 V to 3.6 V, matching standard 3 V SDRAM power domains.
• Package Supplied in an 86‑TSOP II (86‑TFSOP, 0.400", 10.16 mm width) package case for compact board-level placement.
• Operating Range Specified for ambient operation from -40 °C to 85 °C (TA), supporting deployments across a wide temperature span.

Typical Applications

• High-speed parallel memory Use where a 16M × 32 parallel SDRAM device at 133 MHz is required for system memory buffering or frame storage.
• Board-level SDRAM replacement Fits designs needing a compact 86‑TSOP II packaged 512 Mbit SDRAM with defined access timing.
• Temperature‑variable environments Suitable for applications that require reliable operation across -40 °C to 85 °C ambient conditions.

Unique Advantages

• 512 Mbit density in a compact package: Provides significant memory capacity in an 86‑TSOP II footprint for space-constrained boards.
• Defined timing characteristics: 6 ns access time and 133 MHz clock support predictable memory performance for parallel controllers.
• Standard 3 V supply range: 3.0 V to 3.6 V operation aligns with common system power rails.
• Wide ambient temperature support: Specified -40 °C to 85 °C operation for use across varied thermal environments.
• Parallel interface compatibility: Directly integrates into designs that employ parallel DRAM signaling and control.

Why Choose IC DRAM 512MBIT PAR 86TSOP II?

The IS42S32160F-75ETLI-TR balances density, defined timing, and package compactness for designs that require a 16M × 32 parallel SDRAM solution. Its 512 Mbit capacity, 133 MHz clock support, and 6 ns access time make it a choice for systems that need deterministic SDRAM performance within a standard 86‑TSOP II package.

With a 3.0 V to 3.6 V supply range and specified ambient temperature window of -40 °C to 85 °C, this device is suitable for applications demanding stable operation across common power and temperature conditions, while simplifying board layout thanks to the TSOP II form factor.

Request a quote or contact sales to discuss availability, lead times and pricing for the IS42S32160F-75ETLI-TR.