IS42S32160F-75EBLI
| Part Description |
IC DRAM 512MBIT PAR 90TFBGA |
|---|---|
| Quantity | 483 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 6 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S32160F-75EBLI – IC DRAM 512MBIT PAR 90TFBGA
The IS42S32160F-75EBLI is a 512 Mbit volatile memory device implemented as SDRAM with a parallel memory interface. It provides a 16M × 32 organization and is supplied in a 90‑TFBGA (8×13) package.
Designed for systems requiring parallel DRAM storage, the device operates from a 3.0 V to 3.6 V supply and supports a 133 MHz clock frequency with a 6 ns access time, offering predictable timing for memory subsystem designs.
Key Features
- Memory Technology SDRAM volatile memory implemented as a 512 Mbit DRAM in a 16M × 32 organization.
- Performance Supports a 133 MHz clock frequency with an access time of 6 ns to meet timing requirements in parallel-memory designs.
- Interface Parallel memory interface suitable for systems that require standard DRAM bus connections.
- Power Operates from a 3.0 V to 3.6 V supply range to match common 3 V system rails.
- Package Supplied in a 90‑TFBGA (8×13) package for compact board-level mounting.
- Operating Temperature Rated for operation from −40 °C to 85 °C (TA), supporting industrial temperature ranges.
Typical Applications
- Parallel‑interface memory subsystems Use as a 512 Mbit SDRAM device in systems that require a parallel DRAM interface and deterministic timing.
- Embedded system buffers Suitable where a 16M × 32 memory organization and 133 MHz clocking meet buffering and working memory needs.
- Board‑level DRAM Compact 90‑TFBGA packaging for use in space‑constrained PCB designs requiring parallel DRAM connectivity.
Unique Advantages
- Clear density and organization: The 512 Mbit capacity and 16M × 32 organization make mapping and memory addressing straightforward for parallel DRAM designs.
- Deterministic timing: A specified 6 ns access time and 133 MHz clock support predictable memory performance for timing‑sensitive applications.
- Wide supply range: Support for 3.0 V to 3.6 V systems allows integration with common 3 V power rails.
- Industrial temperature support: Rated −40 °C to 85 °C (TA) for operation across typical industrial temperature conditions.
- Compact BGA package: The 90‑TFBGA (8×13) package enables high‑density board layouts while providing standard BGA mounting.
Why Choose IC DRAM 512MBIT PAR 90TFBGA?
The IS42S32160F-75EBLI positions itself as a straightforward SDRAM option for designers needing a 512 Mbit parallel DRAM with defined timing and industrial temperature capability. Its combination of 16M × 32 organization, 133 MHz clock support, and a 3.0 V–3.6 V supply range makes it suitable for embedded memory subsystems and board‑level DRAM buffering.
This device is appropriate for designs that value clear memory organization, deterministic access timing, and compact packaging, providing a stable building block for systems requiring parallel SDRAM integration.
For pricing, availability or to request a quote for IS42S32160F-75EBLI, submit your requirements and a sales team member will follow up with a formal quote.
