IS42S32160F-75EBL
| Part Description |
IC DRAM 512MBIT PAR 90TFBGA |
|---|---|
| Quantity | 422 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 6 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S32160F-75EBL – IC DRAM 512MBIT PAR 90TFBGA
The IS42S32160F-75EBL is a 512 Mbit volatile SDRAM device organized as 16M × 32 bits. It implements a parallel memory interface and is supplied in a 90-TFBGA package (8×13).
Designed for applications that require mid-density parallel DRAM, this device offers specified timing characteristics including a 133 MHz clock frequency and a 6 ns access time, with an operating supply range of 3V ~ 3.6V and an ambient temperature range of 0°C ~ 70°C (TA).
Key Features
- Memory Type 512 Mbit volatile SDRAM organized as 16M × 32 for straightforward system memory integration.
- Performance Clock frequency rated at 133 MHz with an access time of 6 ns to support timely data transactions.
- Interface Parallel memory interface for conventional SDRAM system implementations.
- Power Supply voltage range of 3V ~ 3.6V to match systems operating near standard 3 V rails.
- Package 90-TFBGA (8×13) package case providing a compact footprint for board-level deployment.
- Operating Range Ambient operating temperature 0°C ~ 70°C (TA), suitable for standard temperature commercial applications.
Typical Applications
- System Memory Use as mid-density parallel SDRAM in designs that require 512 Mbit volatile storage with a 16M × 32 organization.
- Embedded Platforms Integration into embedded systems that rely on a parallel SDRAM interface and 3V-class supply voltages.
- Consumer Electronics Suitable for consumer devices operating within the 0°C to 70°C ambient temperature range that need standard SDRAM performance.
Unique Advantages
- 512 Mbit Capacity: Provides a balance of density and manageability for mid-range memory requirements.
- Defined Performance Specs: 133 MHz clock and 6 ns access time deliver deterministic timing for system designers.
- Standard Parallel Interface: Simplifies integration into existing SDRAM-based memory architectures.
- 3V Supply Compatibility: Operates across a 3V ~ 3.6V range to align with common system power rails.
- Compact BGA Package: 90-TFBGA (8×13) offers a small board footprint for space-constrained designs.
- Commercial Temperature Range: Rated 0°C ~ 70°C (TA) for typical commercial applications.
Why Choose IS42S32160F-75EBL – IC DRAM 512MBIT PAR 90TFBGA?
The IS42S32160F-75EBL is positioned for engineers and procurement teams seeking a verified 512 Mbit SDRAM device with a parallel interface, clear timing specifications, and a compact 90-TFBGA package. Its 133 MHz clock rating and 6 ns access time make it suitable for systems that require predictable SDRAM performance within a 3V-class power envelope.
This device is well suited to designs that prioritize mid-density memory capacity, conventional parallel SDRAM integration, and commercial temperature operation, backed by manufacturer-specified electrical and timing parameters from ISSI, Integrated Silicon Solution Inc.
Request a quote or submit an inquiry for IS42S32160F-75EBL to obtain pricing and availability information.
