IS42S32160F-6TL-TR
| Part Description |
IC DRAM 512MBIT PAR 86TSOP II |
|---|---|
| Quantity | 1,276 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S32160F-6TL-TR – IC DRAM 512MBIT PAR 86TSOP II
The IS42S32160F-6TL-TR is a 512 Mbit volatile SDRAM organized as 16M × 32 with a parallel memory interface. It operates at a clock frequency up to 167 MHz and offers an access time of 5.4 ns, targeting designs that require mid-density synchronous DRAM in an 86-TSOP II package.
Key electrical and mechanical attributes include a supply voltage range of 3.0 V to 3.6 V and an operating temperature range of 0°C to 70°C, making the device suitable for standard commercial temperature applications where parallel SDRAM memory is required.
Key Features
- Memory Core 512 Mbit SDRAM configured as 16M × 32, providing a parallel 32-bit data organization for memory-intensive operations.
- Performance Supports a clock frequency of 167 MHz with a typical access time of 5.4 ns for synchronous data access.
- Interface Parallel memory interface suitable for designs requiring conventional DRAM signaling and organization.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Package Supplied in an 86-TSOP II (86-TFSOP, 0.400", 10.16 mm width) package for compact board-level integration.
- Operating Temperature Rated for commercial operation from 0°C to 70°C (TA).
- Memory Format DRAM, volatile memory technology suitable for dynamic storage needs.
Unique Advantages
- High-density memory: 512 Mbit capacity provides ample storage in a single device for mid-range memory requirements.
- 32-bit organization: 16M × 32 arrangement enables wide parallel data paths for efficient burst transfers.
- Measured timing: 167 MHz clocking and 5.4 ns access time offer defined synchronous performance metrics for system timing design.
- Standard power envelope: 3.0 V–3.6 V supply compatibility with common 3.3 V system rails.
- Compact footprint: 86-TSOP II package (10.16 mm width) supports dense board layouts where package height and width are constrained.
- Commercial temperature rating: 0°C to 70°C specification aligns with standard commercial electronic applications.
Why Choose IS42S32160F-6TL-TR?
IS42S32160F-6TL-TR is positioned for designs that require a reliable, mid-density parallel SDRAM solution with clearly specified timing and electrical characteristics. Its 16M × 32 organization and 512 Mbit capacity make it suitable where a wide parallel data bus and compact TSOP II packaging are design priorities.
This device is appropriate for customers and engineers needing deterministic SDRAM performance (167 MHz clock, 5.4 ns access) and a 3.0 V–3.6 V power profile within a commercial temperature range, enabling straightforward integration into systems that rely on parallel DRAM memory architecture.
Request a quote or submit an inquiry to obtain pricing, lead-time, and availability for the IS42S32160F-6TL-TR.
