IS42S32160F-75EBL-TR

The IS42S32160F-75EBL-TR is a volatile SDRAM device providing 512 Mbit of parallel memory organized as 16M × 32. It delivers fast access with a 133 MHz clock frequency and a 6 ns access time for applications that require high-density, high-speed volatile storage.

Designed for operation from 3.0 V to 3.6 V and an ambient temperature range of 0°C to 70°C, the device is supplied in a compact 90-TFBGA (8×13) package for space-constrained surface-mount implementations.

Key Features

• Memory Architecture  512 Mbit SDRAM organized as 16M × 32, providing a high-density parallel memory configuration.
• Performance  133 MHz clock frequency with a 6 ns access time for rapid read/write responsiveness.
• Interface  Parallel memory interface suitable for designs requiring parallel DRAM connectivity.
• Power  Nominal supply voltage range of 3.0 V to 3.6 V to match standard 3 V system rails.
• Package  90-TFBGA (8×13) supplier device package for compact, surface-mount PCB layouts.
• Operating Temperature  Specified ambient operating range of 0°C to 70°C (TA).
• Memory Format  Volatile DRAM suitable for system memory, buffering, and working storage applications.

Typical Applications

• High-capacity volatile storage  Use as 512 Mbit parallel SDRAM for system memory, data buffering, and temporary storage where a 16M × 32 organization is required.
• High-speed buffering  Applications that need 133 MHz clock operation and 6 ns access time for fast data throughput.
• Compact surface-mount designs  Systems that require a small-footprint 90-TFBGA (8×13) package for dense PCB layouts.

Unique Advantages

• High-density 512 Mbit capacity: Reduces the need for multiple memory devices by providing substantial volatile storage in a single package.
• Fast access and clock rates: 6 ns access time and 133 MHz clock frequency enable responsive read/write performance for demanding buffers and working memory tasks.
• Standard parallel interface: Simplifies integration into systems designed for parallel DRAM architectures.
• Broad 3.0 V–3.6 V supply range: Compatible with common 3 V system power rails for straightforward power design.
• Compact 90-TFBGA package: Supports space-constrained board layouts while maintaining robust surface-mount mounting.
• Specified operating range: Rated for 0°C to 70°C ambient operation to match typical commercial-temperature designs.

Why Choose IC DRAM 512MBIT PAR 90TFBGA?

The IS42S32160F-75EBL-TR positions itself as a high-density, parallel SDRAM solution that combines a 16M × 32 memory organization with 133 MHz clocking and 6 ns access time. Its electrical and mechanical specifications—3.0 V–3.6 V supply, 90-TFBGA (8×13) package, and 0°C to 70°C operating range—make it suitable for designs that require compact, fast volatile memory with predictable electrical characteristics.

This device is appropriate for engineers and procurement teams developing systems that need a single-package 512 Mbit parallel DRAM, offering straightforward integration into parallel-memory architectures and a balance of density, speed, and package compactness.

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