IS42S32160F-6TLI

IC DRAM 512MBIT PAR 86TSOP II
Part Description

IC DRAM 512MBIT PAR 86TSOP II

Quantity 649 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S32160F-6TLI – IC DRAM 512MBIT PAR 86TSOP II

The IS42S32160F-6TLI is a volatile SDRAM device offering 512 Mbit of parallel DRAM organized as 16M x 32. It provides a parallel memory interface with a 167 MHz clock frequency and a typical access time of 5.4 ns.

Designed for systems that require high-density parallel SDRAM in a compact board footprint, the device operates from a 3.0 V to 3.6 V supply and is specified for an ambient temperature range of −40°C to 85°C. Packaging is an 86‑TSOP II (0.400", 10.16 mm width) suitable for surface-mount applications.

Key Features

  • Memory Core 512 Mbit SDRAM organized as 16M x 32, providing high-density parallel memory in a single device.
  • Performance 167 MHz clock frequency with a 5.4 ns access time for responsive random access performance.
  • Interface Parallel DRAM memory interface suitable for designs using conventional parallel memory buses.
  • Power Operates from a 3.0 V to 3.6 V supply range to match common 3 V DRAM power domains.
  • Package 86‑TSOP II surface-mount package (86‑TFSOP, 0.400", 10.16 mm width) for compact board-level integration.
  • Operating Range Specified for ambient temperatures from −40°C to 85°C (TA), supporting a broad thermal operating window.

Typical Applications

  • Parallel memory subsystems Provides 512 Mbit parallel SDRAM capacity (16M x 32) for systems requiring board-mounted DRAM devices.
  • Embedded designs Fits designs that need a compact, high-density SDRAM component with a 3.0–3.6 V supply and wide temperature range.
  • PCB surface-mount implementations Suited for layouts that use an 86‑TSOP II (0.400", 10.16 mm) package for space-constrained boards.

Unique Advantages

  • High-density single-device memory: 512 Mbit capacity in a single 16M x 32 device reduces component count compared to multiple lower-density parts.
  • Measured access performance: 5.4 ns access time combined with a 167 MHz clock supports responsive memory access patterns.
  • Standard parallel interface: Parallel DRAM interface simplifies integration into existing parallel memory architectures.
  • Wide operating temperature: −40°C to 85°C rating enables deployment across a broad range of ambient conditions.
  • Compact TSOP II package: 86‑TSOP II (0.400", 10.16 mm width) enables dense board placement and surface-mount assembly.
  • Flexible supply range: 3.0 V to 3.6 V operation aligns with typical 3 V DRAM power domains for easier power design.

Why Choose IS42S32160F-6TLI?

The IS42S32160F-6TLI positions as a high-density parallel SDRAM option delivering 512 Mbit in a compact 86‑TSOP II package with a 16M x 32 organization, 167 MHz clocking, and a 5.4 ns access time. Its 3.0–3.6 V supply range and −40°C to 85°C operating window make it suitable for a wide range of board-level memory applications where verified parallel DRAM performance and space-efficient packaging are required.

This device is appropriate for designers and procurement teams seeking a single-device memory solution that combines density, defined access characteristics, and an industry-standard TSOP II footprint for straightforward PCB integration.

Request a quote or submit an inquiry to evaluate availability and pricing for the IS42S32160F-6TLI for your next design.

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