IS42S32160F-6BLI-TR
| Part Description |
IC DRAM 512MBIT PAR 90TFBGA |
|---|---|
| Quantity | 1,309 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S32160F-6BLI-TR – IC DRAM 512Mbit PAR 90TFBGA
The IS42S32160F-6BLI-TR is a 512 Mbit volatile SDRAM device from ISSI (Integrated Silicon Solution Inc.) organized as 16M × 32 with a parallel memory interface. It provides deterministic SDRAM performance with a 167 MHz clock frequency and a 5.4 ns access time in a compact 90‑TFBGA (8×13) package.
Designed for systems requiring off-chip parallel SDRAM, the device supports a 3.0–3.6 V supply range and an operating ambient temperature range of −40 °C to 85 °C, enabling use in designs that require specified temperature and voltage operating windows.
Key Features
- Memory Type & Organization Volatile SDRAM organized as 16M × 32 providing a total capacity of 512 Mbit for parallel memory architectures.
- Performance Operates with a 167 MHz clock frequency and a 5.4 ns access time for predictable read/write timing behavior.
- Voltage Supports a supply voltage range of 3.0 V to 3.6 V, matching common 3 V SDRAM power domains.
- Package Supplied in a 90‑TFBGA package (8×13 mm footprint) for compact board-level integration.
- Operating Temperature Rated for an ambient temperature range of −40 °C to 85 °C to support a wide environmental envelope.
- Interface Parallel memory interface suitable for systems using standard DRAM bus architectures.
Unique Advantages
- 512 Mbit capacity in a single device: 16M × 32 organization provides significant off-chip memory density while preserving a parallel bus architecture.
- Deterministic timed access: 167 MHz clock and 5.4 ns access time give clearly defined performance parameters for timing-sensitive designs.
- Compact BGA footprint: 90‑TFBGA (8×13) package reduces board area compared with larger packages while keeping BGA-level thermal and routing characteristics.
- Wide temperature range: −40 °C to 85 °C rating supports designs that require operation across extended ambient conditions.
- Standard 3 V supply compatibility: 3.0–3.6 V supply range aligns with common 3 V system rails for straightforward power integration.
Why Choose IC DRAM 512MBIT PAR 90TFBGA?
The IS42S32160F-6BLI-TR delivers a clearly specified SDRAM solution combining 512 Mbit capacity, defined timing (167 MHz clock, 5.4 ns access), and a compact 90‑TFBGA package. Its electrical and thermal ratings make it suitable for designs that require a standardized parallel SDRAM device with documented operating ranges.
This device is appropriate for engineers and procurement teams seeking a predictable, board-mountable SDRAM component with explicit organization and supply requirements. Its combination of capacity, timing, package, and temperature specifications supports integration into systems needing reliable off-chip SDRAM resources.
Request a quote or contact sales to discuss availability, pricing, and support for the IS42S32160F-6BLI-TR.
