IS42S32160F-75ETL-TR

The IS42S32160F-75ETL-TR is a 512 Mbit volatile DRAM device implemented in SDRAM architecture with a parallel memory interface. It delivers a 16M × 32 organization and is specified for a 133 MHz clock frequency and a 6 ns access time.

This device is intended for systems that require mid-density, parallel SDRAM memory in a compact 86-TSOP II package and operates over a 0 °C to 70 °C ambient temperature range with a 3.0 V to 3.6 V supply.

Key Features

• Memory Core Volatile SDRAM implemented as 16M × 32 organization providing 512 Mbit total capacity in a DRAM format.
• Performance Rated for a 133 MHz clock frequency with a 6 ns access time, suitable for designs requiring this specified timing.
• Interface Parallel memory interface for compatibility with parallel SDRAM memory subsystems.
• Power Single supply operation from 3.0 V to 3.6 V.
• Package Supplied in an 86-TSOP II package (86-TFSOP, 0.400" / 10.16 mm width) for compact board-level integration.
• Operating Range Specified ambient operating temperature range of 0 °C to 70 °C (TA).

Typical Applications

• System Memory Modules Provides 512 Mbit SDRAM capacity for designs that require parallel SDRAM as main or auxiliary system memory.
• Buffer and Temporary Storage Suitable for applications needing mid-density volatile storage with defined access timing and clock frequency.
• Board-Level Memory Upgrades Fits designs that accept 86-TSOP II packaged parallel SDRAM devices for replacement or capacity scaling.

Unique Advantages

• 512 Mbit Density: High-density memory provided as a 16M × 32 organization to meet mid-capacity storage requirements.
• Defined Timing Performance: 133 MHz clock rating and 6 ns access time support predictable memory timing in system designs.
• Standard Parallel Interface: Parallel SDRAM interface simplifies integration into existing parallel memory subsystems.
• Compact 86-TSOP II Package: Space-efficient 86-TFSOP footprint (0.400", 10.16 mm width) for board-level integration where package profile matters.
• Wide Supply Tolerance: Operates across 3.0 V to 3.6 V supply range to accommodate common 3 V memory power rails.
• Manufacturer: Produced by Integrated Silicon Solution Inc., providing traceability to a known memory supplier.

Why Choose IC DRAM 512MBIT PAR 86TSOP II?

The IS42S32160F-75ETL-TR positions itself as a straightforward, mid-density SDRAM option for designs that require a 512 Mbit parallel DRAM with defined timing characteristics and a compact TSOP II package. Its combination of 16M × 32 organization, 133 MHz clock rating, and 6 ns access time makes it appropriate for systems that need predictable SDRAM performance within the specified ambient and supply ranges.

This device is well suited to engineers and procurement teams looking for a packaged memory component from Integrated Silicon Solution Inc. for use in board-level memory subsystems, buffering, or capacity scaling where the listed electrical, timing, and mechanical specifications match the system requirements.

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