IS42S32160F-7BL-TR

The IS42S32160F-7BL-TR is a 512 Mbit SDRAM device organized as 16M × 32 with a parallel memory interface. It provides standard SDRAM architecture with a 143 MHz clock frequency and an access time of 5.4 ns.

This device is intended for designs that require external parallel DRAM with a 512 Mbit capacity, offering defined operating parameters including a 3.0 V to 3.6 V supply and an ambient operating temperature range of 0°C to 70°C. The device is supplied in a 90-TFBGA (8×13) package.

Key Features

• Memory 512 Mbit capacity, organized as 16M × 32 to support larger external working memory requirements.
• Core Technology SDRAM architecture with a parallel memory interface for standard synchronous DRAM operation.
• Performance 143 MHz clock frequency and a typical access time of 5.4 ns for deterministic memory access characteristics.
• Power Operating supply voltage range of 3.0 V to 3.6 V to match common 3V SDRAM domains.
• Package 90-TFBGA package (8×13) providing a compact ball grid array footprint for surface-mount assembly.
• Environmental Specified ambient operating temperature range of 0°C to 70°C (TA).
• Memory Interface Parallel DRAM interface for integration with systems expecting synchronous parallel memory devices.

Typical Applications

• Embedded Memory Expansion — External SDRAM for embedded systems that require a 512 Mbit parallel memory element operating at up to 143 MHz.
• Buffering and Frame Memory — Use as external buffer memory where 16M × 32 organization and 5.4 ns access time meet system latency and throughput needs.
• General-Purpose System Memory — Integration into designs that require a standard parallel SDRAM device with a 3.0–3.6 V supply and commercial temperature range.

Unique Advantages

• Defined capacity and organization: 512 Mbit (16M × 32) provides clear sizing for memory budgeting and system memory architecture.
• Measured timing characteristics: 143 MHz clock and 5.4 ns access time allow predictable performance planning for memory-critical subsystems.
• Standard SDRAM interface: Parallel SDRAM architecture simplifies integration into systems designed for synchronous DRAM devices.
• Wide 3V supply compatibility: 3.0–3.6 V supply range aligns with common 3V SDRAM power domains.
• Compact BGA footprint: 90-TFBGA (8×13) package provides a space-efficient surface-mount option for high-density board designs.
• Commercial temperature rating: 0°C to 70°C operating range suits many commercial and some industrial environments.

Why Choose IS42S32160F-7BL-TR?

The IS42S32160F-7BL-TR offers a straightforward, specification-driven solution for systems needing a 512 Mbit parallel SDRAM device. With explicit timing (143 MHz clock, 5.4 ns access) and a defined voltage and temperature envelope, it is suitable for designs where known performance and form-factor constraints are important.

This device is well suited to engineers and procurement teams specifying external DRAM for embedded platforms, buffering, or general-purpose system memory where a 90-TFBGA package and a 3.0–3.6 V supply are required. Its clear, verifiable specifications support predictable integration and long-term design planning.

Request a quote or submit an RFQ to receive pricing and availability for the IS42S32160F-7BL-TR.