IS42S32160F-7TL

IC DRAM 512MBIT PAR 86TSOP II
Part Description

IC DRAM 512MBIT PAR 86TSOP II

Quantity 249 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S32160F-7TL – IC DRAM 512MBIT PAR 86TSOP II

The IS42S32160F-7TL from ISSI is a 512 Mbit volatile SDRAM organized as 16M × 32 with a parallel memory interface. It delivers synchronous DRAM functionality with a rated clock frequency of 143 MHz and an access time of 5.4 ns.

Designed for board-level memory implementations, this device offers standard SDRAM performance in an 86‑TSOP II (86‑TFSOP, 10.16 mm width) package and operates from a 3.0 V to 3.6 V supply over an ambient temperature range of 0 °C to 70 °C.

Key Features

  • Memory Type & Capacity 512 Mbit volatile SDRAM organized as 16M × 32, suitable for parallel DRAM memory requirements.
  • Performance Rated clock frequency of 143 MHz with an access time of 5.4 ns for latency-sensitive board designs.
  • Interface Parallel memory interface for direct integration into systems that support parallel SDRAM signaling.
  • Power Operates from a 3.0 V to 3.6 V supply range, compatible with standard 3.3 V systems.
  • Package & Mounting Supplied in an 86‑TSOP II (86‑TFSOP, 0.400", 10.16 mm width) package for surface-mount board assembly.
  • Operating Temperature Specified ambient range of 0 °C to 70 °C (TA) for general-purpose commercial applications.

Typical Applications

  • Board-Level Memory Expansion Used where a 512 Mbit parallel SDRAM is required for additional system memory on PCBs and modules.
  • Embedded Systems Suitable for embedded designs needing a parallel SDRAM device with 16M × 32 organization and a 3.0–3.6 V supply.
  • Consumer and Commercial Electronics Applicable in devices operating within a 0 °C to 70 °C ambient range that require synchronous DRAM performance.

Unique Advantages

  • High-density 512 Mbit capacity: Provides substantial memory in a single 16M × 32 DRAM device for systems with moderate memory requirements.
  • Synchronous SDRAM timing: 143 MHz clock rating and 5.4 ns access time enable predictable, synchronous memory transactions.
  • Standard 3.0–3.6 V supply: Compatible with common 3.3 V system power rails, simplifying power design and integration.
  • Surface-mount 86‑TSOP II package: Compact 86‑TFSOP form factor (10.16 mm width) for efficient board layout and automated assembly.
  • Parallel interface simplicity: Direct parallel SDRAM connection supports conventional memory controller architectures.

Why Choose IS42S32160F-7TL?

The IS42S32160F-7TL positions itself as a straightforward, high-density parallel SDRAM option for designs that require 512 Mbit of volatile memory with synchronous performance. Its specified 143 MHz clock capability, 5.4 ns access time, and 16M × 32 organization make it suitable for systems that need predictable SDRAM timing and a standard 3.0–3.6 V supply.

This device is appropriate for engineers specifying board-level memory expansions or embedded applications operating within a 0 °C to 70 °C ambient range and looking for a compact 86‑TSOP II package solution from ISSI.

If you need pricing, availability, or technical evaluation support for the IS42S32160F-7TL, request a quote or contact sales to discuss your requirements and lead times.

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