IS42S32160F-7TLI-TR
| Part Description |
IC DRAM 512MBIT PAR 86TSOP II |
|---|---|
| Quantity | 949 Available (as of May 19, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S32160F-7TLI-TR – IC DRAM 512MBIT PAR 86TSOP II
The IS42S32160F-7TLI-TR is a 512 Mbit volatile SDRAM device provided in an 86-TSOP II package. It implements a parallel SDRAM architecture organized as 16M × 32 for board-level memory expansion where a parallel memory interface is required.
This device targets systems that require a compact, mid-density SDRAM solution with defined performance parameters including a 143 MHz clock frequency, 5.4 ns access time, and operation over a –40°C to 85°C ambient temperature range.
Key Features
- Memory Core — 512 Mbit DRAM, organized as 16M × 32, providing parallel storage for system-level memory needs.
- Technology — SDRAM (synchronous DRAM) architecture designed for parallel memory interfaces.
- Performance — Supports a clock frequency of 143 MHz and specified access time of 5.4 ns to meet defined timing requirements.
- Voltage — Operates from 3.0 V to 3.6 V, matching typical 3 V SDRAM power domains.
- Package — Supplied in an 86-TFSOP / 86-TSOP II package (0.400", 10.16 mm width) for board-level mounting and compact footprint.
- Interface — Parallel memory interface suitable for designs requiring parallel DRAM connectivity.
- Operating Range — Specified for ambient operation from –40°C to 85°C (TA), enabling use in extended-temperature environments.
Typical Applications
- Embedded system memory — Provides 512 Mbit of parallel SDRAM for embedded platforms that require board-mounted volatile storage.
- Legacy parallel memory designs — Fits designs that use parallel SDRAM interfaces and need a compact TSOP II package.
- Industrial equipment — Suitable for equipment operating across –40°C to 85°C that requires mid-density SDRAM in a space-efficient package.
Unique Advantages
- Mid-density capacity: 512 Mbit organized as 16M × 32 delivers a balance between capacity and board footprint for many system memory requirements.
- Defined performance: 143 MHz clock and 5.4 ns access time provide predictable timing characteristics for system design and validation.
- Wide supply range: 3.0 V to 3.6 V operation supports common 3 V SDRAM power domains and simplifies power distribution considerations.
- Compact TSOP II package: 86-TSOP II (0.400", 10.16 mm width) reduces PCB area while remaining compatible with standard board-mounting processes.
- Extended ambient temperature: Rated for –40°C to 85°C operation to meet the needs of thermally demanding installations.
Why Choose IC DRAM 512MBIT PAR 86TSOP II?
The IS42S32160F-7TLI-TR positions itself as a straightforward, specification-driven SDRAM option for designs requiring a 512 Mbit parallel memory device in a compact TSOP II package. Its documented clock and access-time figures, along with a 3.0 V–3.6 V supply range and extended operating temperature, make it suitable for board-level implementations where predictable electrical and thermal behavior is required.
This device is appropriate for engineers and procurement teams seeking a mid-density SDRAM component with clear, verifiable specifications for integration into embedded systems, industrial equipment, and parallel-memory designs.
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