IS42S32200C1-55T-TR

The IS42S32200C1-55T-TR is a 64‑Mbit synchronous DRAM (SDRAM) organized as 524,288 × 32 × 4 banks for high-speed, burst‑oriented memory operation. It is designed for 3.3V memory systems and implements a fully synchronous interface with internal bank architecture to hide row access and precharge latency.

This device targets applications that require compact, parallel SDRAM with programmable burst length and sequence, self‑refresh and power‑down modes, and LVTTL signalling in a 86‑pin TSOP II package.

Key Features

• Core Architecture Quad‑bank SDRAM internally organized as 524,288 bits × 32 bits × 4 banks to enable interleaved access and improved throughput.
• Memory Capacity & Organization 64 Mbit total capacity configured as 2M × 32 (16,777,216‑bit per bank) with burst read/write capability and random column address every clock cycle.
• Performance & Timing Clock frequency up to 183 MHz (CAS latency = 3) with access times as low as 5 ns from clock for CL = 3; programmable CAS latency of 2 or 3 clocks.
• Burst & Sequence Control Programmable burst lengths (1, 2, 4, 8, full page) and sequential/interleave burst sequence options with automatic column‑address generation.
• Power & Refresh Single 3.3V supply (operating range 3.15V–3.45V), supports self‑refresh, AUTO REFRESH mode and power‑down mode; 4096 refresh cycles every 64 ms.
• Interface LVTTL compatible inputs/outputs and a parallel memory interface suitable for synchronous pipeline operation (all signals referenced to CLK rising edge).
• Package & Temperature Available in 86‑pin TSOP II (400‑mil, 10.16 mm width) package; specified operating temperature 0°C to 70°C (TA) and noted availability in industrial temperature grade.
• Command & Control Supports ACTIVE, READ, WRITE, AUTO PRECHARGE and burst termination commands to manage row activation, precharge and burst operations.

Typical Applications

• 3.3V memory subsystems — Deploy as system memory in designs that operate from a 3.3V supply and require synchronous, parallel DRAM.
• High‑speed burst buffering — Use where burst read/write transfers, programmable burst lengths and bank interleaving are needed to maintain throughput.
• Low‑power memory modes — Suitable for designs that benefit from self‑refresh and power‑down modes to reduce power during idle periods.
• Space‑constrained PCBs — Fits compact 86‑pin TSOP II footprints for dense board layouts requiring 64 Mbit SDRAM.

Unique Advantages

• Quad‑bank architecture: Enables bank interleaving and hides precharge cycles, improving effective throughput for burst accesses.
• High clock capability: Rated up to 183 MHz (CL = 3), providing low access latency (as low as 5 ns from clock) for time‑sensitive memory operations.
• Flexible burst control: Programmable burst lengths and sequences simplify data transfer management and support a range of access patterns.
• Standard 3.3V operation: Single 3.3V supply with a specified 3.15V–3.45V operating range for compatibility with common system rails.
• Compact package options: 86‑pin TSOP II package provides a small board footprint while delivering 64 Mbit capacity.
• Power management features: Self‑refresh and power‑down modes plus AUTO REFRESH support help reduce standby power and maintain data integrity.

Why Choose IS42S32200C1-55T-TR?

The IS42S32200C1-55T-TR combines a 64‑Mbit SDRAM capacity with quad‑bank, fully synchronous architecture and programmable burst/CAS options to deliver predictable, high‑rate memory performance in 3.3V systems. Its LVTTL interface, self‑refresh/power‑down capabilities and support for AUTO PRECHARGE make it suitable for designs that require controlled power behavior and efficient burst transfers.

This device is appropriate for engineers specifying parallel SDRAM in compact TSOP II packages who need low access latency, configurable burst behavior and standard 3.3V operation. The product’s documented timing parameters and banked organization help integrate predictable memory timing into system designs.

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