IS42S32200C1-55TL

The IS42S32200C1-55TL is a 64‑Mbit synchronous DRAM (SDRAM) organized as 524,288 × 32 × 4 banks, designed to operate in 3.3V memory systems. It uses a fully synchronous, pipelined architecture with LVTTL signalling to support high‑speed, burst-oriented read/write transfers.

This device targets designs that require a parallel SDRAM memory element with programmable burst length and CAS latency options, available in a 86‑pin TSOP II (400‑mil, 10.16 mm width) package and specified for 0 °C to 70 °C ambient operation.

Key Features

• Memory Architecture  Organized as 512K × 32 × 4 banks (64‑Mbit) with internal banking to hide row access and precharge operations.
• Performance  Clock frequency supported up to 183 MHz (‑55 grade); programmable CAS latency of 2 or 3 clocks and access time from clock as low as 5 ns at CL = 3.
• Burst and Sequence Control  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences selectable as sequential or interleave; supports burst read/write and burst read/single write operations with burst termination.
• Interface  Fully synchronous operation with all signals referenced to the rising edge of the clock; LVTTL input/output compatibility and parallel memory interface.
• Refresh and Power Modes  Auto refresh and self‑refresh modes supported with 4096 refresh cycles every 64 ms; includes power‑down mode for reduced standby consumption.
• Supply Voltage  Single 3.3 V supply with specified operating range 3.15 V to 3.45 V.
• Package & Temperature  Offered in 86‑TSOP II (400‑mil, 10.16 mm width) package; operating ambient temperature range 0 °C to 70 °C (TA).

Typical Applications

• 3.3V memory subsystems  For designs requiring a 64‑Mbit SDRAM device with LVTTL interface and single 3.3 V supply.
• High‑speed burst transfer systems  Where programmable burst lengths, burst sequences and CAS latency options enable flexible high‑throughput data transfers.
• Space‑constrained PCB designs  Suitable for systems that require a compact 86‑pin TSOP II (400‑mil) footprint.

Unique Advantages

• Quad‑bank architecture  Internal 4‑bank configuration allows interleaving and hiding of precharge cycles to sustain high throughput.
• Flexible burst control  Programmable burst length and sequence options enable designers to optimize transfers for different data patterns and system requirements.
• High clock capability  Supports up to 183 MHz operation (‑55 grade), providing low access time from clock at CAS latency = 3.
• Standard LVTTL interface  All inputs and outputs are LVTTL compatible for straightforward integration into 3.3 V logic systems.
• Power and refresh management  Auto and self‑refresh modes plus a power‑down mode help manage power consumption while maintaining data integrity through required refresh cycles.

Why Choose IS42S32200C1-55TL?

The IS42S32200C1-55TL combines a synchronous, pipelined SDRAM architecture with programmable latency and burst controls to provide a flexible 64‑Mbit parallel memory option for 3.3 V systems. Its quad‑bank organization and support for high clock frequencies make it suitable for designs that need predictable, burst‑oriented data throughput.

This device is appropriate for engineers and procurement teams seeking a compact 86‑pin TSOP II packaged SDRAM with LVTTL signalling, selectable performance modes, and standard refresh/power management features for robust system integration.

Request a quote or submit an inquiry to obtain pricing and availability for the IS42S32200C1-55TL.