IS42S32200C1-6T-TR

The IS42S32200C1-6T-TR is a 64‑Mbit synchronous DRAM organized as 524,288 bits × 32 bits × 4 banks, delivering a quad‑bank, pipeline architecture for high‑speed synchronous memory operation. The device is designed for 3.3 V memory systems with LVTTL signaling and all inputs/outputs registered on the rising edge of the clock.

On‑chip features such as internal bank interleaving, programmable burst modes and self‑refresh support are provided to improve sustained throughput and simplify memory control in systems that require synchronous DRAM performance and predictable timing behavior.

Key Features

• Core architecture  Quad‑bank organization (524,288 × 32 × 4) with pipeline architecture; fully synchronous operation with all signals referenced to a positive clock edge.
• Memory capacity & format  64 Mbit DRAM capacity with parallel memory interface.
• Performance & timing  Clock frequency options include 183, 166 and 143 MHz; the IS42S32200C1-6T-TR variant is specified at 166 MHz with an access time of 5.5 ns and programmable CAS latency of 2 or 3 clocks.
• Burst & sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential or interleave); supports burst read/write and burst read/single write operations with burst termination via burst stop and precharge.
• Refresh & low‑power modes  Self refresh and power‑down modes supported; 4096 refresh cycles every 64 ms provide required DRAM refresh management.
• Interface & supply  LVTTL compatible interface; single 3.3 V power supply (operating range 3.15 V to 3.45 V).
• Package & temperature  Available in a 86‑pin TSOP II (400‑mil, 10.16 mm width) supplier package; specified operating ambient temperature 0°C to 70°C (TA). The device family is also noted as available in industrial temperature grade and lead‑free options.

Unique Advantages

• Quad‑bank architecture: Enables bank interleaving to hide precharge cycles and improve concurrent access performance.
• Flexible burst control: Programmable burst lengths and sequence modes let designers optimize throughput and latency for varied access patterns.
• Synchronous pipeline timing: Registered inputs/outputs and positive‑edge clocking support high‑rate, predictable data transfers at up to the device’s rated clock frequency.
• Standard 3.3 V LVTTL I/O: Simplifies integration into 3.3 V memory systems with common logic‑level compatibility.
• Compact TSOP II package: 86‑pin, 400‑mil TSOP II footprint provides a space‑efficient form factor for board‑level memory implementations.
• Refresh and low‑power support: Built‑in self‑refresh and power‑down modes plus defined refresh cycles (4096/64 ms) reduce system management overhead.

Why Choose IS42S32200C1-6T-TR?

The IS42S32200C1-6T-TR combines a 64‑Mbit quad‑bank SDRAM organization with synchronous, pipeline‑oriented timing and flexible burst/CAS programming to deliver predictable, high‑speed memory behavior in 3.3 V systems. Its LVTTL I/O, supported low‑power modes and compact 86‑pin TSOP II packaging make it suitable where synchronized, parallel DRAM capacity and controlled timing are required.

This device is appropriate for designs that require configurable burst operation, bank interleaving and standard 3.3 V integration, while offering options within the device family for industrial temperature grades and lead‑free assemblies for broader deployment scenarios.

Request a quote or contact sales to discuss availability, lead times and pricing for IS42S32200C1-6T-TR.