IS42S32200C1-6TLI

The IS42S32200C1-6TLI is a 64‑Mbit synchronous DRAM (SDRAM) from ISSI organized as 524,288 × 32 × 4‑bank to deliver high‑speed, burst‑oriented memory in a parallel interface. It is specified for operation from 3.15 V to 3.45 V and is available in an 86‑pin TSOP II (400‑mil, 10.16 mm width) package.

Designed for 3.3 V synchronous memory systems, the device implements a fully synchronous, pipelined architecture with internal bank interleaving, programmable burst lengths and sequence, and selectable CAS latency to support high‑throughput system memory applications operating across an industrial temperature range.

Key Features

• Memory Core 64‑Mbit SDRAM organized as 524,288 × 32 × 4 banks (total 67,108,864 bits) with internal quad‑bank architecture to enable concurrent bank operations.
• Performance Clock frequency options include up to 183 / 166 / 143 MHz; CAS latency is selectable (2 or 3 clocks) and access times are specified as low as 5.0–5.5 ns for CAS‑latency = 3.
• Burst and Sequencing Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential or interleave) with support for burst read/write and burst read/single write operations and burst termination.
• Refresh and Power Modes Supports AUTO REFRESH, self refresh and power‑down modes with 4096 refresh cycles every 64 ms for standard SDRAM refresh management.
• Interface and Signaling Fully synchronous operation with all signals registered on the rising edge of CLK; LVTTL‑compatible inputs/outputs and random column address capability every clock cycle.
• Supply and Temperature Single 3.3 V power supply with operating voltage range of 3.15 V to 3.45 V and industrial temperature grade availability (−40 °C to 85 °C TA).
• Package Supplied in a 86‑pin TSOP II (400‑mil, 10.16 mm width) package; device is also offered in alternate package options per manufacturer documentation.

Typical Applications

• 3.3 V synchronous system memory — Fits memory arrays and subsystems designed around a 3.3 V SDRAM interface where parallel SDRAM is required.
• Industrial equipment — Industrial temperature grade (−40 °C to 85 °C) supports deployment in temperature‑demanding embedded systems.
• High‑throughput burst memory — Programmable burst lengths, interleave capability and selectable CAS latency make it suitable for designs that require predictable burst performance.

Unique Advantages

• Quad‑bank architecture: Internal 4‑bank organization enables bank interleaving to hide precharge latency and sustain high data throughput.
• Flexible burst control: Programmable burst lengths and sequence options (sequential/interleave) allow designers to tune access patterns for system needs.
• Selectable timing modes: CAS latency options (2 or 3) and defined clock frequency grades provide deterministic timing tradeoffs between speed and timing margin.
• Industrial temperature range: Specified operation from −40 °C to 85 °C makes the device suitable for harsher environmental conditions.
• Standard SDRAM signaling: Fully synchronous, LVTTL‑compatible interface and single 3.3 V supply simplify integration into existing 3.3 V SDRAM subsystems.

Why Choose IS42S32200C1-6TLI?

The IS42S32200C1-6TLI delivers a compact 64‑Mbit SDRAM solution with a synchronous, pipelined architecture and quad‑bank organization that supports high‑speed burst transfers and predictable timing. Its selectable CAS latencies, programmable burst behavior and standard LVTTL interface make it well suited to 3.3 V memory systems requiring configurable performance and deterministic access patterns.

With industrial temperature availability and a standard 86‑pin TSOP II package, this ISSI device is appropriate for embedded and industrial designs that need reliable, parallel SDRAM capacity with documented timing and refresh characteristics.

Request a quote or contact sales to discuss availability, lead times and volume pricing for IS42S32200C1-6TLI.