IS42S32200C1-6TL-TR

The IS42S32200C1-6TL-TR is a 64 Mbit synchronous DRAM (SDRAM) device organized as 2M × 32 with four internal banks for improved throughput and bank interleaving. It implements a fully synchronous, pipeline architecture and is designed for 3.3 V memory systems that require parallel SDRAM with programmable burst and latency options.

This device targets designs that need high-speed, burst-oriented memory access with features such as self-refresh, internal bank precharge hiding and LVTTL-compatible I/O for parallel system interfaces.

Key Features

• Memory Architecture Organized as 2M × 32 with 4 internal banks (64 Mbit total) to enable bank interleave and improved random-access throughput.
• Synchronous SDRAM Core Fully synchronous operation with all inputs/outputs referenced to the rising clock edge and pipeline architecture for high-speed transfers.
• Clock and Timing Supports clock rates including 166 MHz (part -6 timing); programmable CAS latency options (2 or 3 clocks) and access times as low as 5.5 ns at CL=3.
• Burst and Addressing Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave) with random column address capability every clock cycle.
• Refresh and Power Self-refresh modes supported and 4096 refresh cycles every 64 ms to preserve data integrity in low-activity intervals.
• Interface and I/O LVTTL-compatible I/O and parallel memory interface for standard SDRAM system integration.
• Supply and Operating Range Single-supply operation at nominal 3.3 V with an allowed supply range of 3.15 V to 3.45 V; commercial operating temperature 0°C to 70°C.
• Package Available in an 86-pin TSOP II (400-mil, 10.16 mm width) package suited for compact board-level mounting.

Unique Advantages

• Quad-bank organization: Internal 4-bank architecture enables precharge hiding and bank interleaving to sustain burst throughput across random accesses.
• Flexible burst control: Programmable burst lengths and sequences let designers optimize read/write patterns for memory bandwidth and access locality.
• Low-latency operation: Programmable CAS latency (2 or 3) and access times down to 5.5 ns (CL=3) support designs that need predictable, fast read responses.
• Standard parallel interface: LVTTL-compatible signals and synchronous clocked operation simplify integration into 3.3 V parallel memory subsystems.
• Power-management features: Self-refresh and power-down modes with defined refresh cycle behavior reduce power during idle periods while maintaining data retention.
• Compact board footprint: 86-pin TSOP II packaging provides a high-density memory option for space-constrained PCBs.

Why Choose IC DRAM 64MBIT PAR 86TSOP II?

The IS42S32200C1-6TL-TR delivers a balanced combination of synchronous SDRAM performance and configuration flexibility for 3.3 V parallel memory systems. Its quad-bank organization, programmable burst/latency options and LVTTL I/O make it suitable for designs that require deterministic burst transfers and efficient bank-level concurrency.

This device is appropriate for designers seeking a 64 Mbit SDRAM component with established SDRAM features (self-refresh, programmable burst, bank interleave) and a compact 86‑pin TSOP II package for board-level integration.

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