IS42S32200C1-55TL-TR

The IS42S32200C1-55TL-TR is a 64 Mbit synchronous DRAM (SDRAM) device from ISSI organized for high-speed, parallel memory applications. It implements a quad-bank, pipelined architecture with synchronous command timing and LVTTL signaling to support burst-oriented read/write operations.

Designed for 3.3 V systems, this 2M × 32 (64 Mbit) SDRAM targets board-level and embedded designs that require predictable, pipelined memory performance with programmable burst and latency options.

Key Features

• Memory Architecture Organized as 64 Mbit total capacity with a quad-bank structure; each bank is internally configured as 2,048 rows × 256 columns × 32 bits for flexible addressing and bank interleaving.
• Performance Supports clock frequencies up to 183 MHz (–55 grade). Programmable CAS latency of 2 or 3 clocks with an access time from clock of 5 ns at CL = 3 (–55), enabling high-rate synchronous transfers.
• Burst and Access Modes Programmable burst lengths (1, 2, 4, 8, full page) and selectable sequential/interleave burst sequences. Supports burst read/write, burst read/single write, burst termination and AUTO PRECHARGE for streamlined transactions.
• Refresh and Power Modes Self refresh and AUTO REFRESH modes supported with 4,096 refresh cycles per 64 ms to maintain data integrity; includes power-down capabilities described in the device specification.
• Interface LVTTL-compatible inputs and synchronous operation with all signals referenced to the rising edge of CLK; parallel memory interface suitable for standard SDRAM controllers.
• Power Single 3.3 V supply operation with specified voltage range of 3.15 V to 3.45 V.
• Package and Temperature Available in an 86-pin TSOP II (400-mil, 10.16 mm width) package. Specified operating ambient temperature range: 0°C to 70°C (TA).

Typical Applications

• Board-level system memory — Serves as synchronous parallel DRAM for embedded motherboards and controller-based designs that require a 64 Mbit SDRAM.
• High-speed buffering — Used for burst-oriented data buffering where programmable burst lengths and low CAS latency improve throughput.
• Memory expansion modules — Suitable for designs needing an on-board 3.3 V SDRAM component in an 86-TSOP II footprint.

Unique Advantages

• Quad-bank architecture: Internal bank structure allows bank interleaving to hide precharge time and improve effective throughput.
• Programmable burst behavior: Selectable burst lengths and sequences provide flexibility to optimize access patterns for specific workloads.
• High-frequency operation: Support for up to 183 MHz clock and low access times (5 ns at CL = 3 for –55) enables fast synchronous transfers.
• Standard 3.3 V supply and LVTTL interface: Simplifies integration into legacy 3.3 V systems with established signaling conventions.
• Compact TSOP II package: 86-pin, 400-mil TSOP II package supports board-level mounting with a 10.16 mm body width.

Why Choose IS42S32200C1-55TL-TR?

The IS42S32200C1-55TL-TR combines a 64 Mbit SDRAM capacity with a synchronous, quad-bank architecture and programmable latency/burst features to deliver deterministic, high-speed memory behavior for board-level and embedded designs. Its LVTTL interface and 3.3 V operation make it compatible with common system architectures while the TSOP II package supports compact module implementations.

This device is appropriate for engineers who need a vetted, synchronous DRAM building block with selectable burst modes, low access times at high clock rates, and standard power and signaling requirements.

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