IS42S32160F-7TL-TR
| Part Description |
IC DRAM 512MBIT PAR 86TSOP II |
|---|---|
| Quantity | 402 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S32160F-7TL-TR – IC DRAM 512MBIT PAR 86TSOP II
The IS42S32160F-7TL-TR is a 512 Mbit volatile SDRAM organized as 16M × 32 with a parallel memory interface. It provides synchronous DRAM storage with a specified clock frequency of 143 MHz and an access time of 5.4 ns.
Designed for board-level integration in systems that require high-density parallel DRAM, the device is supplied in an 86-TSOP II package and operates from a 3.0 V to 3.6 V supply over a commercial temperature range of 0 °C to 70 °C.
Key Features
- Memory 512 Mbit SDRAM organized as 16M × 32, providing a contiguous parallel memory array for systems requiring this density and organization.
- Performance Specified clock frequency of 143 MHz and an access time of 5.4 ns to characterize timing and data throughput in synchronous designs.
- Interface Parallel DRAM memory interface for direct connection to parallel memory buses and controllers.
- Power Operates from a 3.0 V to 3.6 V supply, supporting standard 3 V DRAM supply levels.
- Package Supplied in an 86-TSOP II (86-TFSOP, 0.400", 10.16 mm width) package suitable for PCB-level mounting where this package form-factor is required.
- Environmental Commercial operating temperature range of 0 °C to 70 °C (TA).
Typical Applications
- Parallel-memory systems — Used where a 512 Mbit parallel SDRAM is required for system memory expansion or buffering.
- Board-level DRAM implementations — Fits designs that accept an 86-TSOP II package for compact PCB placement.
- Synchronous data buffering — Appropriate for applications that rely on SDRAM timing characteristics such as the specified 143 MHz clock and 5.4 ns access time.
Unique Advantages
- High-density SDRAM: 512 Mbit capacity organized as 16M × 32 provides substantial on-board storage in a single device.
- Defined timing performance: 143 MHz clock frequency and 5.4 ns access time offer clear timing parameters for system design and validation.
- Standard 3 V supply range: 3.0 V to 3.6 V operation aligns with common 3 V DRAM supply rails.
- Compact TSOP II package: 86-TSOP II (10.16 mm width) package enables integration on space-constrained PCBs that support this footprint.
- Commercial temperature rating: 0 °C to 70 °C operation suits a wide range of non-industrial applications and environments.
Why Choose IS42S32160F-7TL-TR?
The IS42S32160F-7TL-TR offers a clear specification set—512 Mbit SDRAM capacity, 16M × 32 organization, 143 MHz clocking, and 5.4 ns access time—packaged in an 86-TSOP II footprint. These defined electrical and mechanical parameters simplify integration into designs that require parallel SDRAM with predictable timing and standard 3 V supply compatibility.
Manufactured by ISSI (Integrated Silicon Solution Inc.), this device is suitable for designers and procurement teams looking for a commercially rated, board-mountable SDRAM option with documented performance and footprint characteristics.
Request a quote or submit a pricing inquiry for IS42S32160F-7TL-TR to obtain product availability and further ordering details.
